基本信息
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Career Trajectory
Bio
Makoto Yabuuchi received the B.E. and M.E. degrees in electronic engineering and the Ph.D. degree in engineering from Kanazawa University, Ishikawa, Japan, in 2002, 2004, and 2018, respectively.
In 2004, he joined Renesas Technology Corporation, Itami, Japan, and transferred to Renesas Electronics Corporation, Kodaira, Japan, in 2010, where he has been involved in designing embedded SRAMs and content addressable memory (CAMs) for 65–7-nm CMOS logic process, particularly random variability issues on SRAM cells and assist circuitries. Since 2021, he has been with TSMC Design Technology Japan Inc., Yokohama, Japan, where he has worked on the research and development of advanced node-embedded SRAMs.
Research Interests
Papers共 91 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE J. Solid State Circuitsno. 4 (2024): 1225-1234
IEEE Journal of Solid-State Circuitsno. 99 (2024): 1-10
VLSI Technology and Circuitspp.1-2, (2023)
symposium on vlsi circuitspp.1-2, (2020)
S. Nakata,Hiroki Hanazono,H. Makino,H. Morimura, M. Miyama,Yoshio Matsudaquot, D. Ho, K. Iniewski, S. Kasnavi, A. Ivanov, K. Montoye, L. Sekaric,S. Mcnab,Anna W. Topol,C. Adams, W. Guarini,S. Ohbayashi,M. Yabuuchi, K. Nii, Y. Tsukamoto, S. Imaoka, Y. Oda, M. Igarashi, M. Takeuchi, H. Kawashima,H. Makino
semanticscholar(2020)
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Author Statistics
#Papers: 92
#Citation: 1720
H-Index: 23
G-Index: 40
Sociability: 6
Diversity: 3
Activity: 4
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