A 26-40GHz Transformer-coupled LNA with 3.1-3.7 dB Noise Figure in 22nm FD-SOI

2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)(2022)

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摘要
A low-noise amplifier (LNA) with noise reduction methods in 22nm FDSOI is presented in this paper. To achieve a wideband design, the LNA is designed as a two-stage cascode amplifier with wideband transformer-based input and output matching. The 3-dB bandwidth (BW) for |S21| is 26-40GHz, and the peak gain in-band is 18.2dB at 32.8GHz. Noise reduction method is implemented in casocde node resulting in the noise figure in-band being 3.1-3.7 dB. The 3rd order input intercept (IIP3) reaches -10.8dBm at 28GHz and -7.4dBm at 39GHz respectively with 13mW DC power consumption in 800mV voltage supply. The chip area is only 0.24mm 2 .
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关键词
Low noise amplifier,wideband design,low power,compact design,FD-SOI,5G
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