Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process
arxiv(2024)
摘要
Metal oxide (MO) semiconductors are widely used in electronic devices due to
their high optical transmittance and promising electrical performance. This
work describes the advancement toward an eco-friendly, streamlined method for
preparing thin-film transistors (TFTs) via a pure water-solution blade-coating
process with focus on a low thermal budget. Low temperature and rapid annealing
of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium
oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2
gate dielectric at 300 ^∘C for only 60 s yields devices with an average
field effect mobility of 10.7 and 13.8 cm2/Vs, respectively. The devices show
an excellent on/off ratio (>10^6), and a threshold voltage close to 0 V when
measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics
fabricated by rapid annealing treatment can achieve a remarkable mobility of
over 10 cm2/Vs at low operating voltage. When using a longer post-coating
annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2/Vs) and
IZI-TFTs (over 38 cm2/Vs) using MO semiconductor layers annealed at 300
^∘C are achieved.
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