生产微电子材料；半导体原材料检测；技术开发；销售自产产品。（市场主体依法自主选择经营项目，开展经营活动；依法须经批准的项目，经相关部门批准后依批准的内容开展经营活动；不得从事国家和本市产业政策禁止和限制类项目的经营活动。）
Due to its high resolution, easy process, and independence to complex optical exposure systems, Directed Self Assembly (DSA) is a promising alternative patterning technology in microlithography area. In this paper, a new block copolymer was designed and synthesized through anionic polymerization. It has large molecular weight and low PDI. The formation of lamellae was confirmed and the L-0 of the polymer was analysed by using Small Angle X-ray Scattering (SAXS) and 2D-Fourier transform of SEM images. ICP dry etch data showed that the two blocks had a good etch rate ratio, which was good for pattern transfer. A neutral underlayer was crafted for the BCP to phase separate on and form perpendicular features. Annealing temperature and time were investigated for the phase separation of this BCP/Neutral layer system. It could be found this system shows phase separation after spin coating, without any anneal step, by analysis of finger print patterns. 50 nm lines could be found after spin coating. The dependence of L-0 on MW is described along with approaches and results of directed self-assembly using graphoepitaxy and this polymer and neutral layer.
Novolak-diazonaphthoquinone photoresists have been widely used in g-line、i-line lithography for its high performance.Although g-line and i-line photoresists are both consisted of novolak resin and diazonaphthoquinone photoactive compounds,in order to fit i-line exposure wavelength and seeking for higher resolution,novolak resin and photoactive compounds(PAC) both have difference in structure from g-line to i-line.In i-line resist,the o-o′bonding content of resin is higher,the esterfication of PAC is higher,the proximity of DNQ groups is distant.Dissolution promoter is an important component of i-line resists,some phenolic additives were very useful to control the dissolution behavior.
Immersion lithography is an advanced technology to improve the resolution, which uses high refractive index immersion liquids to replace the original air space based on dry lithography. The application of the technology plays a key role in the rapid development of IC industry. This paper gives an overview of development history of immersion lithography, the challenges being faced and the requirements of the immersion photoresist; the recent progress of the main resin, the photo-acid generator and the additives are reviewed. At last the research and development trend of immersion photoresist is explored and a preliminary forecast is made.
