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    Applied Physics Letters

    Applied Physics Letters

    JournalISSN 0003-6951eISSN 1077-3118中科院 物理与天体物理 2区

    年发文量

    研究主题

    论文(143741)

    排序
    1Erratum: “High-Order Harmonics Generation in MoS2 Nanosheets in the Presence of CdSe and CdSe/V2O5 Quantum Dots” [appl. Phys. Lett. 128 , 061101 (2026)]
    Srinivasa Rao Konda,Puspendu Barik, Sushma Kumari,Subhash Singh,Venkatesh Mottamchetty, Amit Srivastava,Vyacheslav V. Kim,Rashid A. Ganeev,Venugopal Rao Soma,Chunlei Guo, Wei Li
    2026
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    2Interface-enabled Low-Voltage SiO2 Gating of VO2 Nanobeams for Large Room-Temperature Resistance Modulation
    Yanqing Zhang, Zonglei Zhang, Ning Qiu, Jiaqi Guo, Hanbin Zheng,Kaihan Shan, Fan Zhou,Yonglong Zhou, Shibin Yuan,Weiming Xiong

    Three-terminal gating offers an effective strategy for modulating the electrical transport and metal-insulator transition (MIT) behavior of vanadium dioxide (VO2), while conventional SiO2-gated VO2 devices usually show limited gate tunability. Here, we demonstrate large low-voltage resistance modulation in VO2 nanobeams directly grown on SiO2/Si substrates. The direct-growth configuration establishes a distinct VO2/SiO2 interfacial configuration in a Si-compatible back-gated device geometry. At room temperature, the channel resistance is reduced by approximately 75% under a gate voltage of only 3 V, corresponding to an electric field of 0.1 MV cm−1. When the device is biased near the MIT temperature, the same gate voltage triggers a gate-assisted transition, leading to a current increase of more than two orders of magnitude and a resistance modulation above 99%. In contrast, transferred VO2 nanobeam devices exhibit negligible gate-induced modulation even under much higher gate voltages, supporting an important role of the direct-growth-enabled VO2/SiO2 interfacial configuration in the enhanced gate response. These findings suggest that interfacial engineering may provide an effective route for improving the gate tunability of SiO2-gated VO2 devices, with potential for low-voltage, Si-compatible correlated-oxide electronics.

    2026
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    3Solid-phase Epitaxy of Co2Fe0.4Mn0.6Si Full-Heusler Alloy Electrodes in (001)-Textured MgO-based Magnetic Tunnel Junctions
    Kenta Watanabe,Mikihiko Oogane,Takafumi Nakano

    We demonstrated solid-phase epitaxy of Co2Fe0.4Mn0.6Si (CFMS) full-Heusler alloy electrodes in (001)-textured MgO-based magnetic tunnel junctions (MTJs) fabricated on thermally oxidized Si substrates. Initially amorphous CFMS electrodes crystallized into a (001)-textured structure templated by the adjacent MgO barrier during ex situ annealing without the use of any crystalline seed layers. The corresponding single CFMS thin films exhibited the (002) superlattice reflection, indicating B2 ordering. The CFMS/MgO-based MTJs exhibited high tunnel magnetoresistance ratios of 154% at room temperature and 347% at 40 K. These results highlight solid-phase epitaxy as a simple and effective route for integrating Heusler alloy-based MTJs into practical spintronic devices.

    2026
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    4The Glass Transition: from Competing Theories to Discriminating Tests
    Massimo Pica Ciamarra

    The dramatic slowing down of liquids approaching the glass transition remains unresolved, partly because competing theoretical explanations are difficult to discriminate. Indeed, several mature, contrasting frameworks account for the main features of glassy phenomenology, making agreement with familiar observations a weak basis for identifying the microscopic mechanism responsible for the slowdown. Recent numerical advances are changing this situation in two complementary ways. Deep equilibration extends controlled equilibrium studies into regimes previously accessible only by extrapolation, allowing established predictions to be stress-tested over a broader dynamical range. At the same time, new numerical methods increasingly provide direct access to theory-specific quantities such as configurational entropy, static lengths, elastic properties, and local activation barriers. I discuss how these developments constrain thermodynamic, facilitation-based, elastic, and excitation-based descriptions. The emerging picture is not yet a unique theory, but a set of increasingly discriminating tests that can reveal where apparently successful laws cease to be universal and identify the microscopic ingredients that causally control the activation barrier.

    2026
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    5Localized Phonon Polariton Resonances in CaF2 Nanoparticles
    Davide Baiocco, Marco Carlotti, Xingxu Liu, Emmanuele Cannavò, Gonzalo Álvarez-Pérez,Alessandra Toncelli,Guanying Chen, Andrea Pucci,Simone De Liberato,Alessandro Tredicucci

    Confining infrared light at the nanoscale with low losses is a central challenge in nanophotonics. Surface phonon polaritons in polar dielectrics offer a compelling solution, yet the available materials palette and fabrication routes remain largely limited to top-down lithography. Here, we demonstrate localized phonon-polariton resonances in colloidal calcium fluoride nanoparticles—to our knowledge, the first such observation in a chemically synthesized alkaline-earth fluoride—in the 8–14 THz range. We introduce an analytical model that quantitatively reproduces the far-infrared absorption spectra without requiring full electrodynamic simulations and use it to extract nanoparticle densities in good agreement with those derived from the nanoparticle geometry. Our results establish colloidal synthesis as a viable, scalable route to phonon-polaritonic resonators, broadening both the materials toolbox and the fabrication strategies available for far-infrared nanophotonics.

    2026
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    高被引作者

    作者引用发文
    Ching W. Tang3952831
    Steven P. Denbaars35986361
    James S. Speck31165367
    Stephen J. Pearton29413401
    Shuji Nakamura23366237
    VANSLYKE S A222381
    Umesh K. Mishra18821183
    Hadis Morkoç18694305
    Asif Khan17390160
    Federico Capasso16862161

    高产作者

    作者引用发文
    Stephen J. Pearton29413401
    James S. Speck31165367
    Steven P. Denbaars35986361
    Hadis Morkoç18694305
    Nick Holonyak12756287
    Amnon Yariv13221253
    Manijeh Razeghi16796247
    Shuji Nakamura23366237
    Fan Ren14270228
    David Ritchie8851214

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