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    Optics letters

    Optics letters

    JournalISSN 0146-9592eISSN 1539-4794中科院 物理与天体物理 2区

    年发文量

    研究主题

    论文(46686)

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    1Errata-Cross-phase Modulation Radiation Between Soliton and Four Wave Mixing States: Publisher’s Note
    Xinyu Wang
    2026
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    2Angular-Splitting Hologram for High-Quality Eyebox Expansion in Near-Eye Displays
    Li Liang, Cong Han, Haikui Wen, Yuan Liu,Qibin Feng,Guoqiang Lv,Wang Zi
    2026
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    3Air-Cladding Mode Liquid-Level Sensor Using a Highly Tilted Fiber Bragg Grating
    Jiahao Dong, Zhenchen Li,Kaiwei Li,Xile Han,Tuan Guo
    2026
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    4Strain Engineered Electro-Optic and Opto-Electronic Conversion in InSe Schottky Junctions
    Sinong Liu, Yu Zhang, Haoyun Huang, Boxiang Zhao, Tianren Zhang, Wenjing Shi, Xin Xie, Wenfei Li, Guangpeng Zhu,Tao Wang,Wei Du

    Layered indium selenide (InSe) emerges as a promising candidate for next-generation optoelectronics, yet achieving dynamically reconfigurable near-infrared light sources and photodetectors in these devices remains challenging. Here, we demonstrate a strain-engineered bifunctional device based on a vertical graphene/γ-InSe/graphene Schottky junction on a flexible polypropylene (PP) substrate. By exploiting the large thermal expansion coefficient (CTE) mismatch between InSe and PP, reversible biaxial strain is precisely induced in situ via thermal control. Under electro-optic operation, compressive strain widens InSe’s bandgap via lattice distortion, generating a pronounced blueshift (up to 65 meV) in the electroluminescence (EL) peak. For opto-electronic conversion, strain-mediated modulation of Schottky barrier height suppresses dark current while modulating photocurrent and photoresponsivity under 532 nm and 980 nm illumination. This work establishes strain as a new strategy for reconfigurable InSe-based optoelectronic devices.

    2026
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    5Optoelectronically Co-Modulated Neuromorphic Synapses with Attention and Pruning in Lead-Free Perovskite Single Crystals
    Hao Wang,Ying Liu, Shiwen Chu, Lejin Li, Yingkai Geng, He Bian,Jingli Ma,Zhifeng Shi

    Emulating high-order visual cognitive functions in optoelectronic neuromorphic synapse devices is important for advanced artificial vision systems. Herein, high-quality lead-free vacancy-ordered double perovskite Cs 2 TiCl 6 single crystals are synthesized to construct optoelectronically co-modulated neuromorphic synapse devices. Electrically, the devices exhibit bipolar resistive switching behavior. Optically, the devices show prominent light-induced synaptic potentiation behaviors. Furthermore, three biomimetic high-order visual cognitive modes are implemented by designing specific asynchronous optoelectronic modulation sequences. Benefiting from the effective noise suppression capability of these modes, the pattern recognition accuracy of the neural network can be improved from the baseline of 31.95% to 74.71%, 69.55%, and 86.52%, respectively. This work provides an innovative material candidate and architectural platform for efficient and noise-tolerant advanced artificial visual perception systems.

    2026
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    高被引作者

    作者引用发文
    Philip St. J. Russell18407114
    James Fujimoto1567378
    Demetrios Christodoulides13813103
    Jonathan Knight1378339
    Tim Birks1370845
    Ferenc Krausz1201471
    Ursula Keller11648107
    Arthur Ashkin1149814
    Bahram Javidi1073986
    Steven Chu107337

    高产作者

    作者引用发文
    Alan Eli Willner5593143
    Yaroslav V. Kartashov4410136
    Valentin Petrov5214122
    Moshe Tur4182121
    Martin M. Fejer8463121
    Lluís Torner4723118
    Patrick Georges5964115
    Andreas Tünnermann7581114
    Jens Limpert8338114
    Amnon Yariv9113114

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