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    专

    POE电源的功率控制方法、装置、设备及存储介质

    19807191549B1
    发明人
    樊敬波, 王柱, 邱振海, 余超
    受让人
    -
    申请人
    HONDA MOTOR CO LTD
    申请号
    15906628
    申请日
    2004-10-12
    公开(公告)号
    19807191549B1
    公开(公告)日
    2022-03-09
    IPC分类号
    B29C067/00B33Y030/00B33Y050/02H05K001/02
    CPC分类号
    -
    优先权号
    8374926
    优先权日
    1926-01-24
    摘要

    NOVELTY - The vertical cavity surface emitting laser has a substrate (10), a lower reflector (20), an active medium layer (30), an upper reflector (50) and a current limitation layer (40). The lower reflector is mounted on the substrate. The active medium layer and the upper reflector for a laser oscillation are mounted on the substrate. The current limitation enables a current to flow at the center where a laser is oscillated. The current limitation layer is formed by oxidation.

    USE - Vertical cavity surface emitting laser.

    ADVANTAGE - The vertical cavity surface emitting laser has a substrate, a lower reflector, an active medium layer, an upper reflector and a current limitation layer, and the active medium layer and the upper reflector for a laser oscillation are mounted on the substrate, and thus enables to reduce a manufacturing cost and a light quantity variation without an output light quantity automatic adjusting device.

    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an optical communications module.

    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a vertical cavity surface emitting laser.

    Substrate (10)

    Lower reflector (20)

    Active medium layer (30)

    Current limitation layer (40)

    Upper reflector (50)

    Beam source (120)

    权利要求
    1. A method for measuring an energy efficiency ratio and a coefficient of performance of a system comprising the steps of: measuring a first refrigerant temperature utilizing a first temperature sensor responsive to the first refrigerant temperature leaving an evaporator; generating a first input voltage signal having an amplitude proportional to the first refrigerant temperature; measuring a second refrigerant temperature utilizing a second temperature sensor responsive to the second refrigerant temperature leaving a condenser; generating a second input voltage signal having an amplitude proportional to the second refrigerant temperature; measuring a first refrigerant pressure utilizing a first pressure sensor responsive to the first refrigerant pressure leaving the condenser or entering the condenser; generating a third input voltage signal having an amplitude proportional to the first refrigerant pressure; measuring a second refrigerant pressure utilizing a second pressure sensor responsive to the second refrigerant pressure leaving the evaporator or entering a compressor; generating a fourth input voltage signal having an amplitude proportional to the second refrigerant pressure; calculating a first refrigerant enthalpy using the first input voltage and the third input voltage; calculating a second refrigerant enthalpy using the second input voltage and the fourth input voltage; generating a first input value proportional to the difference between the first refrigerant enthalpy and the second refrigerant enthalpy; measuring a refrigerant flow rate; generating a second input value proportional to the first input value multiplied by the refrigerant flow rate; measuring the electrical energy input to the system; generating a third input value proportional to the electrical energy input; calculating a ratio of the second input value to the third input value; generating an intermediate value indicative of a measured energy efficiency ratio and a coefficient of performance; and calculating and storing successive values of the intermediate value to generate an output value that is directly indicative of the measured integrated energy efficiency ratio.
    2. A system for measuring an energy efficiency ratio of a system comprising: a first temperature sensor configured to measure a first refrigerant temperature between an outlet of a condenser and an inlet of an evaporator and to generate a first input voltage having an amplitude wherein the first input voltage amplitude is proportional to the first refrigerant temperature; a second temperature sensor configured to measure a second refrigerant temperature selectively at an outlet of the evaporator or at an inlet of the compressor and to generate a second input voltage having an amplitude wherein the second input voltage amplitude is proportional to the second refrigerant temperature; a first pressure sensor configured to measure a first pressure of a refrigerant selectively at an inlet to an expansion device or the inlet of the condenser and to generate a third input voltage signal having an amplitude proportional to the first pressure; a second pressure sensor configured to measure a second pressure of the refrigerant at the outlet of the evaporator or at the inlet of the compressor and to generate a fourth input voltage signal having an amplitude proportional to the second pressure; a flow sensor configured to measure a flow rate of the refrigerant and to generate a fifth input voltage signal having an amplitude proportional to the flow rate; a voltage sensor configured to measure an electrical voltage input to the system and to generate a sixth input voltage signal having an amplitude proportional to the electrical voltage input; a current sensor configured to measure an electrical current input of the system and to generate a seventh input voltage signal having an amplitude proportional to the electrical current input; and a processor unit configured to receive the first input voltage signal, the second input voltage signal, the third input voltage signal, the fourth input voltage signal, the fifth input voltage signal, the sixth input voltage signal, and the seventh input voltage signal.
    3. The system according to claim 2 wherein the flow sensor is disposed onto a refrigerant conduit.
    4. The system according to claim 2 further comprising: a fourth temperature sensor configured to measure a first air temperature through the evaporator and to generate a ninth input voltage signal having an amplitude proportional to the first air temperature; and a humidity sensor configured to measure a humidity level through the evaporator and to generate a tenth input voltage signal having an amplitude proportional to the humidity level; and wherein the processor unit is configured to receive the ninth input voltage signal and the tenth input voltage signal.
    5. The system according to claim 2 further comprising: a digital to analog convertor configured receive a digital signal from the processor unit and to generate an analog voltage output signal having an amplitude proportional to an energy efficiency ratio, an integrated energy efficiency ratio, or a coefficient of performance.
    6. The system according to claim 2 further comprising: a third temperature sensor configured to measure a first air temperature through a condenser and to generate an eighth input voltage signal having an amplitude wherein the eighth input voltage is proportional to the first air temperature; and wherein the processor unit is configure to receive the eighth input voltage signal.
    7. The system according to claim 2 further comprising: a display.
    说明书
    [0001]大出光孔垂直腔面发射半导体激光器的多芯电注入结构
    [0002]技术领域
    [0003]本发明涉及一种垂直腔面发射半导体激光器的电注入结构，属于半导体激光器件技术领域。
    [0004]背景技术
    [0005]在制作垂直腔面发射半导体激光器的过程中，参见图1，在台面边缘刻蚀环形沟槽1，经过氧化，在布拉格反射镜中的高铝层临近沟槽两侧部分形成氧化物限制区2，而中间部分成为出光孔3，垂直腔面发射半导体激光器的出光孔3同时也是电流的注入区。为了提高功率，一般采用加大出光孔径的方法。由于出光孔3的出光孔径大于10微米时容易出现载流子聚集效应，而为了得到较高的激光器功率，通常把出光孔径开到几百微米，这样便造成了出光孔3内各点电流强度不同，就会造成孔内发光不均匀，并且会造成出光孔3内局部过热而影响激光器的寿命。另外，在很多情况下尤其需要得到瞬时的高功率，因而很多高功率半导体激光器采用短脉冲的驱动方式。由于短脉冲的峰值宽度很窄，上升沿和下降沿处有丰富的高频分量，在高频情况下，电流趋于导体表面，发生趋肤效应(skineffect)。这种效应在大截面导体中尤为突出。对于大出光孔垂直腔面发射半导体激光器来说，脉冲电流的注入区截面积较大，在趋肤效应的作用下，电流趋于出光孔3的外侧，这样又造成在大出光孔3内出现注入电流强度不均匀的情况，进一步导致出光孔外侧局部电流过大而出现局部过热的现象，最终表现为出光孔外侧光强大，出光孔靠近圆心处光强小或不发光，因此，对激光器的性能和寿命都非常不利。由此可见，无论直流驱动还是脉冲驱动，在大出光孔垂直腔半导体激光器内都会出现注入电流强度不均匀的现象。
    [0006]发明内容
    [0007]为了消除已知技术存在的不足，即在加大垂直腔面发射半导体激光器出光孔径、采用短脉冲驱动的方式的同时，或者只在加大垂直腔面发射半导体激光器出光孔径的同时，实现注入电流强度的均匀分布，我们发明了一种大出光孔垂直腔面发射半导体激光器的多芯电注入结构。
    [0008]本发明是这样实现的，大出光孔垂直腔面发射半导体激光器的多芯电注入结构位于布拉格反射镜中的高铝层；在环形沟槽1及其两侧的氧化物限制区2所包围的区域内均匀分布若干个分立电流注入区；这些分立电流注入区由分布于该区域内的多条沟槽及其两侧的氧化物限制区或者多个孔穴及其周围的氧化物限制区所分隔；沟槽、孔穴的底同环形沟槽1的底一样，在深度方向上均透过所述高铝层；沟槽两侧、孔穴周围的氧化物限制区同环形沟槽1两侧的氧化物限制区2一样，均处在所述高铝层层面；孔穴周围的氧化物限制区彼此相连。
    [0009]根据上述技术方案，在垂直腔面发射半导体激光器电流注入区内形成若干独立的分立电流注入区，它们均匀分布，彼此独立，从而形成大出光孔的多芯电注入结构。每个分立电流注入区既是一个独立的电流注入区也是一个独立的发光区。作为一个整体的原有电流注入区此时被化整为零，所以可以在保留原有大出光孔的孔径的同时，甚至可以在继续大幅度增加原有大出光孔径的同时，消除已知技术存在的注入电流强度整体上分布不均匀的现象。比如，大出光孔孔径可以做到1000微米，而分立电流注入区孔径却可以在10微米以下。这样的话，首先，每一个分立电流注入区的注入电流强度分布自然要比原来的电流注入区的注入电流强度分布均匀得多；其次，由于分立电流注入区均匀分布于原来的电流注入区，所以，从原来的电流注入区规模来看，电流强度的分布也变得均匀了。因而载流子聚集效应在电流注入区内基本消除。另外，尽管因趋肤效应而产生的注入电流强度分布不匀现象依然会在分立电流注入区内出现，但是，因分立的电流注入区尺度很小，并且各个分立电流注入区均匀分布在原来的电流注入区内，所以，在整体上趋肤效应也被弱化。总的来说使得大出光孔的注入电流强度分布均匀，发光强度也均匀。另外，虽然起分隔作用的沟槽、孔穴以及氧化物限制区占据了大面积的电流注入区，但是，有助于器件的散热，另外，本发明之半导体激光器出光孔径可以比现有半导体激光器出光孔径大得多，前者可达1000微米，后者通常为几百微米，并且，其中心区域尚不能有效发光，本发明不仅若干分立电流注入区之和可以大于原来的电流注入区，而且原有不能有效发光的区域均得以利用。能够实现通过加大出光孔径的措施提高半导体激光器的功率的目的。由此可见，本发明克服或者弱化了载流子聚集效应以及趋肤效应给大出光孔垂直腔面发射半导体激光器带来的不利影响。
    [0010]附图说明
    [0011]图1是已知技术大出光孔垂直腔面发射半导体激光器的电注入结构示意图。图2是本发明之多芯电注入结构中由沟槽形成的网格状结构示意图。此图兼作摘要附图。图3是本发明之多芯电注入结构中由沟槽形成的同心圆环状结构示意图。图4是本发明之多芯电注入结构中由孔穴形成的蜂窝状结构示意图。图5是本发明之多芯电注入结构中由孔穴形成的网格状结构示意图。
    [0012]具体实施方式
    [0013]实施例1：见图2所示，大出光孔垂直腔面发射半导体激光器的多芯电注入结构位于布拉格反射镜中的高铝层；在环形沟槽1及其两侧的氧化物限制区2所包围的区域内均匀分布若干个分立电流注入区4；这些分立电流注入区4由分布于该区域内的多条直线沟槽5及其两侧的氧化物限制区6所分隔；直线沟槽5的底同环形沟槽1的底一样，在深度方向上均透过所述高铝层；直线沟槽5两侧的氧化物限制区6同环形沟槽1两侧的氧化物限制区2一样，均处在所述高铝层层面；这些直线沟槽5及其两侧的氧化物限制区6呈井田网格状；这些电流注入区4按网格状均匀分布。
    [0014]实施例2；见图3所示，大出光孔垂直腔面发射半导体激光器的多芯电注入结构位于布拉格反射镜中的高铝层；在环形沟槽1及其两侧的氧化物限制区2所包围的区域内均匀分布若干个分立电流注入区7；这些分立电流注入区7由分布于该区域内的多个环形沟槽8及其两侧的氧化物限制区9所分隔；环形沟槽8的底同环形沟槽1的底一样，在深度方向上均透过所述高铝层；环形沟槽8两侧的氧化物限制区9同环形沟槽1两侧的氧化物限制区2一样，均处在所述高铝层层面；这些环形沟槽8及其两侧的氧化物限制区9呈同心圆环状；分立电流注入区7为口径各不相同的环形，它们按同心圆环状均匀分布。
    [0015]实施例3：见图4所示，大出光孔垂直腔面发射半导体激光器的多芯电注入结构位于布拉格反射镜中的高铝层；在环形沟槽1及其两侧的氧化物限制区2所包围的区域3内均匀分布若干个分立电流注入区10；这些分立电流注入区10由分布于该区域3内的多个孔穴11及其周围的氧化物限制区12所分隔；孔穴11的底同环形沟槽1的底一样，在深度方向上均透过所述高铝层；孔穴11周围的氧化物限制区12同环形沟槽1两侧的氧化物限制区2一样，均处在所述高铝层层面，并且彼此相连；这些孔穴11及其周围的氧化物限制区12呈蜂窝状；这些分立电流注入区10按蜂窝状均匀分布。
    [0016]实施例4：见图5所示，大出光孔垂直腔面发射半导体激光器的多芯电注入结构位于布拉格反射镜中的高铝层；在环形沟槽1及其两侧的氧化物限制区2所包围的区域3内均匀分布若干个分立电流注入区13；这些分立电流注入区13由分布于该区域内3的多个孔穴14及其周围的氧化物限制区15所分隔；孔穴14的底同环形沟槽1的底一样，在深度方向上均透过所述高铝层；孔穴14周围的氧化物限制区15同环形沟槽1两侧的氧化物限制区2一样，均处在所述高铝层层面，并且彼此相连；这些孔穴14及其周围的氧化物限制区15呈列阵网格状；这些分立电流注入区13按列阵网格状均匀分布。
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