1. A bonding method, comprising: forming first and second insulating layers on first and second materials, respectively; etching surfaces of one of said first and second layers; bringing together at room temperature said surfaces of said first and second layers after said etching step; and forming a chemical bond between said first and second layers at room temperature.
2. A method as recited in claim 1 , wherein: said etching comprises using a plasma etch process.
3. A method as recited in claim 1 , wherein: said etching comprises using a reactive ion etch process.
4. A method as recited in claim 1 , comprising: forming a bond between said first and second layers at room temperature with a strength of at least 500 mJ/m 2 .
5. A method as recited in claim 1 , comprising: forming a bond between said first and second layers at room temperature with a strength of at least 1000 mJ/m 2 .
6. A method as recited in claim 1 , comprising forming a bond between said first and second layers at worn temperature with a strength of at least 2000 mJ/m 2 .
7. A method as recited in claim 1 , wherein: forming at least one of said first and second layers using plasma-enhanced chemical vapor deposition.
8. A method as recited in claim 1 , wherein: forming at least one of said first and second layers using chemical vapor deposition.
9. A method as recited in claim 1 , wherein: forming at least one of said first and second layers using sputtering.
10. A method as recited in claim 1 , comprising: after farming said chemical bond at about room temperature, annealing said first and second materials at a temperature of no more than about 200° C.
11. A method as recited in claim 1 , comprising: after forming said chemical bond at about room temperature, annealing said first and second materials at a temperature in a range of about 75-100° C.
12. A method as recited in claim 1 , comprising: after said etching, exposing said layers to a process to terminate said surfaces with a terminating species.
13. A method as recited in claim 12 , comprising: exposing said first and second layers to a wet chemistry process.
14. A method as recited in claim 12 , comprising: exposing said first and second layers to a dry plasma or reactive ion process.
15. A method as recited in claim 12 , comprising: exposing said first and second layers to a vapor.
16. A method as recited in claim 12 , comprising: exposing said first and second layers to an ammonia-based solution.
17. A bonding method, comprising: forming a silicon oxide material on a first element; exposing a surface of said silicon oxide material to a plasma RIE process; exposing said silicon oxide material to an ammonia-based solution after said etching; bringing together said silicon oxide material, alter said etching and exposing steps, and a second element; and forming a chemical bond between said silicon oxide material and said second element.
18. A method as recited in claim 17 , comprising: etching a surface of said second element; and bringing together said surface of said silicon oxide material and said surface of said second element alter said exposing and etching steps.
19. A method as recited in claim 17 , wherein said step of exposing said surface of said silicon oxide material to said plasma RIB process comprises etching said silicon oxide material.
20. A method as recited in claim 19 , wherein said exposing comprises etching said silicon oxide material such tat a surface roughness of said silicon oxide material after said etching is substantially the same as a surface roughness of said silicon oxide material before said etching.
21. A method as recited in claim 17 , wherein: a surface roughness of said silicon oxide material after said step of exposing said surface of said silicon oxide material to said plasma RIE process is substantially the same as a surface roughness of said silicon oxide material before said step of exposing said surface of said silicon oxide material to said plasma RIE process.
22. A method as recited in claim 17 , comprising: forming said bond between said silicon oxide material and said second element to a strength of at least 500 mJ/m 2 .
23. A method as recited in claim 22 , comprising: forming said bond at a temperature less than about 200° C.
24. A method as recited in claim 22 , comprising: forming said bond at a temperature less than about 100° C.
25. A method as recited in claim 22 , comprising: heating alter said step of bringing together at a temperature in a range of about 75-100° C.
26. A method as recited in claim 17 , comprising: forming said bond between said silicon oxide material and said second element to a strength of at least 1000 mJ/m 2 .
27. A method as recited in claim 26 , comprising: forming said bond at a temperature less than about 200° C.
28. A method as recited in claim 26 , comprising: forming said bond at a temperature less than about 100° C.
29. A method as recited in claim 26 , comprising: heating after said step of bringing together at a temperature in a range of about 75-100° C.
30. A method as recited in claim 17 , wherein exposing said silicon oxide material to an ammonia-based solution comprises terminating said silicon oxide material with a species.
31. A method as recited in claim 30 , wherein said species is nitrogen-based.
32. A method as recited in claim 30 , wherein said species is fluorine-based.
33. A method as recited in claim 17 , where said second element comprises silicon.
34. A bonding method, comprising: forming first and second planar bonding surfaces; etching at least one of said first and second bonding surfaces; terminating said first and second surfaces with a species after said etching step; bringing into direct contact said first and second bonding surfaces after said etching step; and forming a chemical bond between said first and second bonding surfaces.
35. A method as recited in claim 34 , comprising: etching said first and second surfaces.
36. A method as recited in claim 34 , wherein said etching step comprises exposing said at least one surface to a plasma RIE process.
37. A method as recited in claim 34 , wherein said etching comprises etching said at least one surface such tat a surface roughness of said at least one surface after said etching is substantially the same as a surface roughness of said at least one surface before said etching.
38. A method as recited in claim 34 , comprising: forming said chemical bond to a strength of at least 500 mJ/m 2 .
39. A method as recited in claim 38 , comprising: forming said chemical bond at a temperature less than about 200° C.
40. A method as recited in claim 38 , comprising: forming said chemical bond at a temperature less than about 100° C.
41. A method as recited in claim 38 , comprising: forming said chemical bond at a temperature in a range of about 75-100° C.
42. A method as recited in claim 34 , comprising: forming said chemical bond to a strength of at least 1000 mJ/m 2 .
43. A method as recited in claim 42 , comprising: forming said chemical bond at a temperature less than about 200° C.
44. A method as recited in claim 42 , comprising: forming said chemical bond at a temperature less than about 100° C.
45. A method as recited in claim 42 , comprising: forming said chemical bond at a temperature m a range of about 75-1000° C.
46. A method as recited in claim 34 , wherein said species is nitrogen-based.
47. A method as recited in claim 34 , wherein said species is fluorine-based.
48. A method as recited in claim 34 , where said second bonding surface comprises a silicon surface.
49. A bonding method, comprising: forming a first insulating layer on a first material; etching a surface of said first insulating layer; terminating said surface with a species; bringing together said first insulating layer with a second material after said etching step; and forming a bond of at least about 500 mJ/m 2 between said first and second layers at a temperature below 200° C.
50. A method as recited in claim 49 , comprising; forming said bond at a temperature less than about 100° C.
51. A method as recited in claim 49 , comprising: forming said bond at a temperature in a range about 75-100° C.
52. A bonding method as recited in claim 49 , wherein said etching comprises etching said surface such that a surface roughness of said surface after said etching is substantially the same as a surface roughness of said surface before said etching.
53. A method as recited in claim 49 , wherein said species is nitrogen-based.
54. A method as recited in claim 49 , wherein said species is fluorine-based.
55. A method as recited in claim 49 , where said second material comprises silicon.
56. A processing method, comprising: exposing a first surface of a first element to a plasma to at least etch said first surface; terminating said first surface with a species capable of forming a chemical bond after exposure to said plasma; and bonding said first surface to a second surface of a second element after said terminating step; heating said first and second elements to a temperature no more than about 200° C.; and obtaining a bond strength of at least 500 mJ/m 2 .
57. A method as recited in claim 56 , comprising: healing said first and second elements to a temperature no more than about 100° C.
58. A method as recited in claim 56 , comprising: heating said first and second elements to a temperature no more than about 75-100° C.
59. A method as recited in claim 56 , wherein said exposing comprises etching said first surface such that a surface roughness of said first surface alter said etching is substantially the same as a surface roughness of said first surface before said etching.
60. A method as recited in claim 56 , wherein said species is nitrogen-based.
61. A method as recited in claim 56 , wherein said species is fluorine-based.
62. A method as recited in claim 56 , where said second element comprises silicon.
63. A bonding method, comprising: forming a silicon oxide material on a first element; exposing a surface of said silicon oxide material to a plasma RIE process; terminating said silicon oxide material with a species after said etching; bringing together said silicon oxide material, alter said etching and terminating steps, with a second element; and forming a chemical bond between said silicon oxide material and said second element.
64. A method as recited in claim 63 , comprising: etching a surface of said second element; and bringing together said surface of said silicon oxide material and said surface of said second element alter said exposing and etching steps.
65. A method as recited in claim 63 , wherein said step of exposing said surface of said silicon oxide material to said plasma RIE process comprises etching said silicon oxide material.
66. A method as recited in claim 65 , wherein said exposing comprises etching said silicon oxide material such that a surface roughness of said silicon oxide material after said etching is substantially the same as a surface roughness of said silicon oxide material before said etching.
67. A method as recited in claim 63 , wherein: a surface roughness of said silicon oxide material after said step of exposing said surface of said silicon oxide material to said plasma RIE process is substantially the same as a surface roughness of said silicon oxide material before said step of exposing said surface of said silicon oxide material to said plasma RIE process.
68. A method as recited in claim 63 , comprising: forming said bond between said silicon oxide material and said second element to a strength of at least 500 mJ/m 2 .
69. A method as recited in claim 68 , comprising: forming said bond at a temperature less than about 200° C.
70. A method as recited in claim 68 , comprising: forming said bond at a temperature less than about 100° C.
71. A method as recited in claim 68 , comprising: heating after said step of bringing together at a temperature in a range of about 75-100° C.
72. A method as recited in claim 63 , comprising: forming said bond between said silicon oxide material and said second element to a strength of at least 1000 mJ/m 2 .
73. A method as recited in claim 72 , comprising: forming said bond at a temperature less than about 200° C.
74. A method as recited in claim 72 , comprising: heating after said step of bringing together at a temperature in a range of about 75-100° C.
75. A method as recited in claim 72 , comprising: heating after said step of bringing together at a temperature in a range of about 75-100° C.
76. A method as recited in claim 63 , wherein terminating said silicon oxide material with a species comprises exposing said silicon oxide material to an ammonia-based solution comprises.
77. A method as recited in claim 63 , wherein said species is nitrogen-based.
78. A method as recited in claim 63 , wherein said species is fluorine-based.
79. A method as recited in claim 63 , where said second element comprises silicon.
80. A bonding method, comprising: forming first and second bonding surfaces on first and second materials, respectively; enhancing activation of one of said first and second bonding surfaces; terminating said first and second bonding surfaces with a species allowing formation of chemical bonds at about room temperature; and forming a chemical bond between said first and second materials at about room temperature, wherein said enhancing activation includes exposing to a fluorine containing species.
81. A bonding method, comprising: forming first and second bonding surfaces on first and second materials, respectively; enhancing activation of one of said first and second bonding surfaces; terminating said first and second bonding surfaces with a species allowing formation of chemical bonds at about room temperature; forming a chemical bond between said first and second materials at about room temperature; and after forming said chemical bond at about room temperature, annealing said first and second materials at a temperature of no more than about 200° C.
82. A method as recited in claim 81 , comprising; forming a bond between said first and second materials at room temperature wit a strength of at least 500 mJ/m 2 .
83. A method as recited in claim 81 , comprising; forming a bond between said first and second materials at room temperature wit a strength of at least 1000 mJ/m 2 .
84. A method as recited in claim 81 , comprising: forming a bond between said first and second materials at room temperature with a strength of at least 2000 mJ/m 2 .
85. A bonding method, comprising: forming first and second bonding surfaces on first and second materials, respectively; enhancing activation of one of said first and second bonding surfaces; terminating said first and second bonding surfaces with a species allowing formation of chemical bands at about room temperature; forming a chemical bond between said first and second materials at about room temperature; and after farming said chemical bond at about room temperature, annealing said first and second materials at a temperature in a range of about 75-100° C.
86. A method as recited in claim 85 , comprising: forming a bond between said first and second materials at room temperature wit a strength of at least 500 mJ/m 2 .
87. A method as recited in claim 85 , comprising: forming a bond between said first and second materials at room temperature with a strength of at least 1000 mJ/m 2 .
88. A method as recited in claim 85 , comprising: forming a bond between said first and second materials at room temperature with a strength of at least 2000 mJ/m 2 .
89. A bonding method, comprising: forming first and second materials having first and second bonding surfaces, respectively; etching said first and second bonding surfaces; bringing into direct contact said first and second bonding surfaces after said etching step; forming a chemical bond near room temperature between said first and second bonding surfaces; and after forming said chemical bond at about room temperature, annealing said first and second materials at a temperature of no more than about 200° C.
90. A method as recited in claim 89 , comprising: forming a bond between said first and second bonding surfaces at room temperature with a strength of at least 500 mJ/m 2 .
91. A method as recited in claim 89 , comprising: forming a bond between said first and second bonding surfaces at room temperature with a strength of at least 1000 mJ/m 2 .
92. A method as recited in claim 89 , comprising: forming a bond between said first and second bonding surfaces at room temperature with a strength of at least 2000 mJ/m 2 .
93. A bonding method, comprising: forming first and second materials having first and second bonding surfaces, respectively; etching said first and second bonding surfaces; bringing into direct contact said first and second bonding surfaces after said etching step; forming a chemical bond near room temperature between said first and second bonding surfaces; and after forming said chemical bond at about room temperature, annealing said first and second materials at a temperature in a range of about 75-100° C.
94. A method as recited in claim 93 , comprising: forming a bond between said first and second bonding surfaces at room temperature with a strength of at least 500 mJ/m 2 .
95. A method as recited in claim 93 , comprising: forming a bond between said first and second bonding surfaces at room temperature with a strength of at least 1000 mJ/m 2 .
96. A method as recited in claim 93 , comprising: forming a bond between said first and second bonding surfaces at worn temperature with a strength of at least 2000 mJ/m 2 .
