An article in Nature introduces a recycling strategy for perovskite photovoltaics based on green solvents, achieving high recycling efficiency and purity while mitigating environmental impacts.

An article in Journal of the American Chemical Society demonstrates that engineered disorder enables ultrafast magnetization control in structural highentropy FePt nanoparticles.

An article in Nature Materials reports a salt- and-oxygen-assisted chemical vapour deposition method for the synthesis of 2D single crystals of the non-layered material β-Bi2O3, which exhibit high hole mobility and result in field-effect transistors with attractive performance.

An article in Science Advances demonstrates a high-entropy design strategy that stabilizes multiphase polar nanoregions in perovskite oxides, making them low-frequency microwave absorbers.

An article in Nature Materials reports the fabrication of microscopic metasheet robots that can be electronically controlled to achieve a range of shapes and a locomotion gait.

An article in Nature reports the observation of giant terahertz magnetoelectric oscillations in a van der Waals multiferroic and presents a theoretical model that elucidates their origin.

An article in Nature presents a polymeric thermoelectric material with a figure of merit of 1.28.

An article in Nature Communications reports the identification of two non-volatile spin textures in twisted double-bilayer CrI3, which can be switched by a magnetic field and read out via electrical measurements.

Materialism, a podcast exploring the past, present and future of materials science, is turning five. Co-founders and co-hosts Taylor Sparks (a professor at the University of Utah) and Andrew Falkowski (a PhD student in Sparks’ group) discuss how they use storytelling to create compelling episodes and share their journey and lessons learned.

An article in Nature Materials reports the use of a co-doping strategy to produce a Cu2Se-based superionic material that has a figure of merit of 3 at 1,050 K, an efficiency of over 13% when integrated into a thermoelectric module and good operational stability.

An article in Advanced Materials shows that the moir & eacute; superlattice in a ferromagnetic heterostructure comprising a twisted WS2/WS2 bilayer enhances the spin-orbit torque efficiency and increases its gate tunability.

An article in Nature Materials reports the synthesis of single crystals of ultrathin gadolinium pentoxide (Gd2O5) that combine a high dielectric constant of 25.5 and a wide bandgap of almost 7 eV.

n article in Nature Chemistry reports the use of a single-molecule junction to monitor the individual steps of a Michael reaction in real time through the chirality-induced spin selectivity effect.

n article in Nature Electronics reports the integration of a ferroelectric gate with a transition metal dichalcogenide heterostructure in a device that can work both as a reconfigurable logic switch and as a neuromorphic device.

An article in Science reports new insight in the formation of defects during 3D printing of metals and presents a highly accurate method to track defects as they form, opening the way for closed-loop control systems.

n article in Advanced Electronic Materials shows that thicker aluminium electrodes improve the performance of flexible MoS 2 transistors.

An article in Nature presents a conceptually new scanning probe microscope, called a quantum twisting microscope, which enables both momentum-resolved measurements and in situ tuning of the twist angle between 2D materials stacked on top of each other.

An article in Advanced Materials reports an edible rechargeable battery that can power edible and digestible electronic devices for health care and food monitoring.

n article in the New Journal of Chemistry reports the synthesis of a chiral metal–organic framework that can be used to separate limonene enantiomers.

paper in Nature Nanotechnology reports a residue-free method to transfer wafer-scale flakes of transition metal dichalcogenides and its use to fabricate high-performance field-effect transistors.