基本信息
浏览量:21
职业迁徙
个人简介
R. Anzalone was born in Catania, Italy, in 1979. He received the B.S. degree in physics in July 2005 and the Ph.D. degree in material science in March 2010 from the University of Catania, Catania. His Ph.D. work was focused on the silicon carbide (3C–SiC) growth process and its applications, and his Ph.D. dissertation was focused on the heteroepitaxial 3C–SiC layer on silicon substrate for MEMS applications.
In October 2005, he joined the Frascati Research Center, Italian National Agency for New Technologies, Energy and the Environment (ENEA), Rome, Italy, where he worked on inertial fusion confinement. Since 2011, he has held a postdoctoral post at the Institute of Microelectronics and Microsystems, National Research Council (CNR–IMM), Catania. His research interests include the development of heteroepitaxial 3C–SiC thin films and the study of SiC mechanical proprieties for MEMS and sensor applications.
研究兴趣
论文共 112 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Microelectronic engineering (2024): 112116-112116
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)pp.1-5, (2024)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2023)
Microelectronic engineering (2023): 111962-111962
Materials Science Forum (2022): 74-78
Materials science forum (2022): 69-73
Materials Science Forum (2022): 18-22
Materials science forum (2022): 165-169
Materials Science Forum (2022): 64-68
加载更多
作者统计
#Papers: 112
#Citation: 1073
H-Index: 18
G-Index: 28
Sociability: 6
Diversity: 2
Activity: 8
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn