基本信息
浏览量:0
职业迁徙
个人简介
Norikazu Nakamura received the B.E., M.E., and Ph.D. degrees in engineering from Yokohama National University, Yokohama, Japan, in 1993, 1995, and 1998, respectively.
He joined Fujitsu Laboratories Ltd., Atsugi, Japan in 1998, where was engaged in research and development of diamond-related materials for magnetic media from 1998 to 2009. From 2015 to 2018, he has served as a Principal Investigator for the next-generation high-power GaN high-electron-mobility transistors (HEMTs), which was supported by the Acquisition, Technology & Logistics Agency (ATLA), Japan. He is currently the Head of the Devices & Materials Research Center, Kanagawa, Japan. His current research interests include gallium nitride (GaN)-based high-power/high-frequency devices and microwave systems.
研究兴趣
论文共 65 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
IEEE journal of the Electron Devices Society (2023): 101-106
physica status solidi (a)no. 7 (2022)
加载更多
作者统计
#Papers: 65
#Citation: 919
H-Index: 23
G-Index: 25
Sociability: 5
Diversity: 2
Activity: 28
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn