基本信息
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Career Trajectory
Bio
Yasumitsu Murai received the BS degree in electric engineering from Kinki University, Osaka, Japan, in 1990. In 1990, he joined the LSI Design Center, Mitsubishi Electric Engineering Co., Ltd., Hyogo, Japan. Since then, he has been engaged in the research and development of content addressable memory, synchronous DRAMs, and embedded DRAMs. Now, he is a senior staff engineer of the Memory IP Technology Department 2 in Renesas Electronics Corporation, Tokyo, Japan. He has been engaged in the research and development of Flash memory, embedded MRAM for MCUs, and now is engaged in the Normally-Off computing architecture as for further low-power solution with NVRAMs.
Research Interests
Papers共 10 篇Author StatisticsCo-AuthorSimilar Experts
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mag(1998)
Cited73Views0Bibtex
73
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Cited23Views0Bibtex
23
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Author Statistics
#Papers: 10
#Citation: 303
H-Index: 6
G-Index: 9
Sociability: 4
Diversity: 1
Activity: 0
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