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Beginning in the 1970's, Alfred Y. Cho produced a series of firsts in the highly competitive field of semiconductor devices. He is recognized as the coinventor and principal devloper of molecular beam epitaxy (MBE), a process in which materials are layered atop one another — atom by atom within a vacuum — with great precision to form electronic and photonic devices.
MBE led to radically new devices including high-speed transistors, microwave devices, laser diodes, and detectors. Most of the semiconductor lasers used in today's compact disc music players and DVD players are manufactures used MBE-grown material. MBE is also used to produce the Hall sensors found in disk drive speed controllers for computers and recorders. High electron mobility transistors (HEMTs), which are utilized as high-speed circuit components and in high-frequency, low-noise, direct-broadcast satellite and wireless communications, are manufactured using MBE. RFMD manufactures more than 500 million chips per year with MBE for power amplifiers and radio frequency switches used in mobile phones and global positioning systems.
The impact of MBE on fundamental science was as dramatic as its impact on semiconductor technology. The discovery of an entirely new state of electrons, the fractional quantized Hall Effect, was made possible as a result of MBE crystal quality. In 1994, Cho and coworkers demonstrated a fundamentally new type of laser that is a unipolar intersubband semiconductor laser called the quantum cascase (QC) laser. A significant ongoing contribution of MBE is the experimental generation of low dimensional systems.
MBE led to radically new devices including high-speed transistors, microwave devices, laser diodes, and detectors. Most of the semiconductor lasers used in today's compact disc music players and DVD players are manufactures used MBE-grown material. MBE is also used to produce the Hall sensors found in disk drive speed controllers for computers and recorders. High electron mobility transistors (HEMTs), which are utilized as high-speed circuit components and in high-frequency, low-noise, direct-broadcast satellite and wireless communications, are manufactured using MBE. RFMD manufactures more than 500 million chips per year with MBE for power amplifiers and radio frequency switches used in mobile phones and global positioning systems.
The impact of MBE on fundamental science was as dramatic as its impact on semiconductor technology. The discovery of an entirely new state of electrons, the fractional quantized Hall Effect, was made possible as a result of MBE crystal quality. In 1994, Cho and coworkers demonstrated a fundamentally new type of laser that is a unipolar intersubband semiconductor laser called the quantum cascase (QC) laser. A significant ongoing contribution of MBE is the experimental generation of low dimensional systems.
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Proceedings of the International School of Physics Enrico Fermi (2003): 327-343
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