Tavakkoli Amir K G

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA; NUS Graduate School for Integrative Sciences & Engineering (NGS), 117456, Singapore.

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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Amirhasan Nourbakhsh,Ahmad Zubair,Redwan N. Sajjad,K G Amir Tavakkoli,Wei Chen, Shiang Fang,Xi Ling,Jing Kong,Mildred S. Dresselhaus,Efthimios Kaxiras,Karl K. Berggren,Dimitri A. Antoniadis

Nano Letters, no. 12 (2016): 7798-7806

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Sacrificial-post templating method for block copolymer self-assembly

Amir K G Tavakkoli,Samuel M Nicaise,Adam F Hannon,Kevin W Gotrik,Alfredo Alexander-Katz,Caroline A Ross,Karl K Berggren

Small (Weinheim an der Bergstrasse, Germany), no. 3 (2014): 493-9, 418-493-9, 418

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Self‐Assembly: Sacrificial‐Post Templating Method for Block Copolymer Self‐Assembly (Small 3/2014)

Amir Tavakkoli K G,Samuel M Nicaise,Adam F Hannon,Kevin W Gotrik,Alfredo Alexanderkatz,Caroline A Ross,Karl K Berggren

Small, (2014)

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Topographic Templating: Rectangular Symmetry Morphologies in a Topographically Templated Block Copolymer (Adv. Mater. 31/2012)

Amir Tavakkoli K G,Adam F Hannon,Kevin W Gotrik,Alfredo Alexanderkatz,Caroline A Ross,Karl K Berggren

Advanced Materials, (2012)

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Tavakkoli Amir K GBinding

Papers4 papers

Tavakkoli Amir K G