Brat Berinder - Teledyne Sci, Thousand Oaks, CA 91360 USA

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论文共 11 篇作者统计合作学者相似作者

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50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz

Jesus A Del Alamo,Daehyun Kim,Peter Chen,Wonill Ha,M Urteaga,B Brar

mag（2010）

引用23浏览0引用

Thermal Considerations For Advanced Soi Substrates Designed For Iii-V/Si Heterointegration

N. Yang,M. T. Bulsara,E. A. Fitzgerald,W. K. Liu, D. Lubyshev, J. M. Fastenau,Y. Wu,M. Urteaga,W. Ha,J. Bergman,B. Brar,C. Drazek,

2009 IEEE INTERNATIONAL SOI CONFERENCE（2009）

引用1浏览0EIWOS引用

Monolithically Integrated III-V and Si CMOS Devices on Silicon on Lattice Engineered Substrates (SOLES)

J. R. LaRoche,W. E. Hoke,T. E. Kazior,D. Lubyshev,J. M. Fastenau,W. K. Liu,M. Urteaga,W. Ha,J. Bergman,M. J. Choe,B. Brar,M. T. Bulsara,

msra（2009）

引用23浏览0引用

Monolithic integration of InP-based transistors on Si substrates using MBE

W.K. Liu,D. Lubyshev, J.M. Fastenau,Y. Wu, M.T. Bulsara,E.A. Fitzgerald,M. Urteaga,W. Ha,J. Bergman,B. Brar,W.E. Hoke, J.R. LaRoche,

Journal of Crystal Growth（2009）

引用73浏览0引用

Mbe Growth Of Inp-Hbt Structures On Ge-On-Insulator/Si Substrates By Mbe

D. Lubyshev, J. M. Fastenau,Y. Wu,W. K. Liu,M. T. Bulsara, E. A. Fitzgerald,M. Urteaga, W.Ha, J.Bergman,B.Brar

international conference on indium phosphide and related materialspp.411-+, (2008)

引用0浏览0EIWOS引用

Laterally Engineered Field-Plate Ganhemts For Millimeter-Wave Applications

K. S. Boutros,K. Shinohara,W. Ha,A. Paniagua,B. Brar

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6（2008）

引用1浏览0引用

Direct Growth of III-V Devices on Silicon

Katherine Herrick, Thomas Kazior,Amy Liu, Dmitri I. Loubychev, Joel M. Fastenau,Miguel Urteaga,Eugene A. Fitzgerald,Mayank T. Bulsara,David Clark,Berinder Brar,Wonill Ha,Joshua Bergman,

ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES（2008）

引用5浏览0引用

Engineering Substrates for 3D Integration of III-V and CMOS

Eugene A Fitzgerald, D J Clark, Dave A Smith, Robin F Thompson,George K Celler,Mayank T Bulsara, K J Herrick, T E Kazior,J R Laroche,Amy W Liu,D I Lubyshev, J M Fastenau,

ECS Transactionsno. 8 (2008): 227-234

引用2浏览0引用

Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode

Mariam Gergi Sadaka,B Brar,Wonill Ha,Chanh Ngoc Minh Nguyen

mag（2007）

引用50浏览0引用

Semiconductor device having a contact on a buffer layer thereof and method of forming the same

Mariam Gergi Sadaka,B Brar,Wonill Ha,Chanh Ngoc Minh Nguyen

mag（2007）

引用26浏览0引用

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