Brendan P. Gunning - Sandia Natl Labs

基本信息

Career Trajectory

Bio

Brendan Gunning received the B.S. and M.S. degrees in electrical engineering from the Georgia Institute of Technology, Atlanta, GA, USA, in 2010 and 2012, respectively, where he is currently working toward the Ph.D. degree in electrical engineering.

Research Interests

Papers共 73 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

Sheikh Ifatur Rahman,Mohammad Awwad,Chandan Joishi, Zane Jamal-Eddine,Brendan Gunning,Andrew Armstrong,Siddharth Rajan

Applied physics lettersno. 22 (2024)

Cited0Views0Bibtex

Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN

Alan G. Jacobs,Boris N. Feigelson, James S. Lundh,Joseph A. Spencer,Jaime A. Freitas,Brendan P. Gunning,Robert J. Kaplar,Yuhao Zhang,Marko J. Tadjer,Karl D. Hobart,Travis J. Anderson

Physica status solidi A, Applications and materials science (2024)

Cited0Views0Bibtex

Improving vertical GaN p-n diode performance with room temperature defect mitigation

Nahid Sultan Al-Mamun,James Gallagher,Alan G. Jacobs,Karl D. Hobart,Travis J. Anderson,Brendan P. Gunning,Robert J. Kaplar,Douglas E. Wolfe,Aman Haque

SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 1 (2024)

Cited0Views0Bibtex

Non-Planar Nano-Epitaxy of InGaN Quantum-Well Emitters for Green-Yellow Semiconductor Lasers

Michael G. Wood,Anthony Rice, Stephen R. Lee,Brendan P. Gunning,Mary H. Crawford, Ping Lu, Courtney L. H. Sovinec, Alejandro J. Grine, Elizabeth DeJong,Daniel Feezell, Darwin K. Serkland

openalex（2023）

Cited0Views0Bibtex

Study of Anode Doping and Avalanche in Foundry Compatible 1.2 Kv Vertical GaN PiN Diodes

Mona A. Ebrish,Matthew Porter,Alan Jacobs,James C. Gallagher,Robert J. Kaplar,Brendan P. Gunning,Karl D. Hobart,Travis J. Anderson

Applied physics expressno. 11 (2023): 116501-116501

Cited0Views0Bibtex

Using Machine Learning with Optical Profilometry for GaN Wafer Screening

James C. Gallagher,Michael A. Mastro,Mona A. Ebrish,Alan G. Jacobs,Brendan P. Gunning,Robert J. Kaplar,Karl D. Hobart,Travis J. Anderson

Scientific reports（2023）

Cited0Views0WOSNATUREBibtex

Microstructural Evolution of Extended Defects in 25 M Thick GaN Homo-Epitaxial Layers

Michael E. Liao,Nadeemullah A. Mahadik,James C. Gallagher,Brendan P. Gunning,Robert J. Kaplar,Travis J. Anderson

APPLIED PHYSICS LETTERSno. 24 (2023)

Cited0Views0Bibtex

A Simple Edge Termination Design for Vertical GaN P-N Diodes

Prakash Pandey,Tolen M. Nelson,William M. Collings,Michael R. Hontz,Daniel G. Georgiev,Andrew D. Koehler,Travis J. Anderson,James C. Gallagher,Geoffrey M. Foster,Alan Jacobs,Mona A. Ebrish,Brendan P. Gunning,Robert J. Kaplar,Karl D. Hobart,Raghav Khanna

IEEE transactions on electron devices/IEEE transactions on electron devices（2022）

Cited9Views0EIWOSBibtex

Optimizing Performance and Yield of Vertical GaN Diodes Using Wafer Scale Optical Techniques

James C. Gallagher,Mona A. Ebrish,Matthew A. Porter,Alan G. Jacobs,Brendan P. Gunning,Robert J. Kaplar,Karl D. Hobart,Travis J. Anderson

Scientific reports（2022）

Cited3Views0WOSNATUREBibtex

Ultra-low Voltage GaN Vacuum Nanoelectronics

George T. Wang,Keshab R. Sapkota,A. Alec Talin,Francois Leonard,Brendan P. Gunning,Gyorgy Vizkelethy

2022 Compound Semiconductor Week (CSW)pp.1-2, (2022)

Cited1Views0EIWOSBibtex

Author Statistics

Co-Author

Co-Institution

D-Core

合作者
学生
导师

No result temporarily, you can search similar Scholar with the same research interest

Data Disclaimer

The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn