Can Bayram

Center for Quantum Devices|Department of Electrical Engineering and Computer Science|Northwestern University

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Papers63 papers

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Phonon-assisted reduction of hot spot temperature in AlInN ternaries

Ahmed Mohamed, Kihoon Park,Can Bayram,Mitra Dutta,Michael A Stroscio

Journal of Physics D, no. 36 (2020): 365102

Bibtex

Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

Hsuan-Ping Lee,Can Bayram

IEEE Transactions on Electron Devices, no. 7 (2020): 2760-2764

EIWOSBibtex

Cp2Mg-induced transition metal ion contamination and performance loss in MOCVD-grown blue emitting InGaN/GaN multiple quantum wells

Richard Liu, Eric Tucker, Soo Min Lee, Kalyan Kasarla, Callan McCormick,Can Bayram

Applied Physics Letters, no. 19 (2020): 192106

Bibtex

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

Kihoon Park,Can Bayram

no. 18 (2019): 185103

Bibtex

Comparison of structural and optical properties of blue emitting In 0.15 Ga 0.85 N/GaN multi-quantum-well layers grown on sapphire and silicon substrates

Richard Liu, Callan McCormick,Can Bayram

AIP ADVANCES, no. 2 (2019): 025306

Bibtex

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures

Ahmed Mohamed, Kihoon Park,Can Bayram,Mitra Dutta,Michael Stroscio

PloS one, no. 4 (2019)

WOSBibtex

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Kihoon Park, Ahmed Mohamed,Mitra Dutta,Michael A Stroscio,Can Bayram

Scientific reports, no. 1 (2018): 15947

WOSBibtex

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Richard Liu,Richard Schaller, Chang Qiang Chen,Can Bayram

ACS photonics, no. 3 (2018): 955-963

WOSBibtex

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

J. Perozek, H. P. Lee, Balakrishnan Krishnan, Ajit Paranjpe,K. B. Reuter,Devendra K. Sadana,Can Bayram

Journal of Physics D, no. 5 (2017): 055103

Cited by1Bibtex

A novel thin-film blue light emitting diode via GaN-on-graphene technology

Can Bayram,Jeehwan Kim,Hongsik Park,Cheng-Wei Cheng, Christos Dimitrakopoulos, John A. Ott,Kathleen B. Reuter,Stephen W. Bedell,Devendra K. Sadana

ieee photonics conference, pp.39-40, (2017)

Bibtex

Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

Kihoon Park,Michael A. Stroscio,Can Bayram

Journal of Applied Physics, no. 24 (2017): 245109

Cited by1Bibtex

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

Ko Tao Lee,Can Bayram,Daniel Piedra,Edmund J. Sprogis,Hariklia Deligianni, Balakrishnan Krishnan,George D. Papasouliotis, Ajit Paranjpe, Eyal Aklimi,Kenneth L. Shepard,Tomas Palacios,Devendra K. Sadana

IEEE Electron Device Letters, no. 8 (2017): 1094-1096

EIWOSBibtex

Cubic Phase Light Emitters Hetero-integrated on Silicon

C Bayram,R Liu

IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference, (2017): 35-36

WOSBibtex

Polarization-free integrated gallium-nitride photonics

C Bayram,R Liu

Proceedings of SPIE--the International Society for Optical Engineering, (2017)

WOSBibtex

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

Ryan Grady,Can Bayram

Journal of Physics D, no. 26 (2017): 265104

Bibtex

InGaN-based flexible light emitting diodes

Can Bayram

Proceedings of SPIE, (2017)

Bibtex

Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

Kihoon Park,Can Bayram

Applied Physics Letters, no. 15 (2016): 151904

Bibtex

Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)

Runyu Liu,Can Bayram

Journal of Applied Physics, no. 2 (2016): 025106

Bibtex

Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)

Runyu Liu,Can Bayram

Applied Physics Letters, no. 4 (2016): 042103

Bibtex

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

Can BayramBinding

Papers63 papers

Can Bayram