Chao-Hsin Chien - Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

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Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Yi-Xuan Chen, Yi-Lin Wang, Fu-Jyuan Li, Shu-Jui Chang, Tsung-En Lee, Chao-Ching Cheng,Meng-Chien Lee, Hui-Hsuan Li,Yu-Hsien Lin,Chao-Hsin Chien

IEEE Transactions on Nanotechnologyno. 99 (2024): 1-4

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Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through In Situ Plasma-Enhanced Atomic Layer Deposition

Hui-Hsuan Li, Kuan-Yu Lin,Yi-He Tsai,Yu-Hsien Lin,Chao-Hsin Chien

IEEE Transactions on Electron Devicesno. 99 (2024): 1-6

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Suppressing Threshold Voltage Drift in Sub-2 nm In₂O₃ Transistors With Improved Thermal Stability

Kris K. H. Lin, Li-Cheng Teng, Tzu-Ting Weng, Tzu-Jie Lin, Jian-Cun Lin,Shin-Yuan Wang,Po-Hsun Ho,Wei-Yen Woon,Chi-Chung Kei, Tsung-Te Chou,Chao-Hsin Chien,Der-Hsien Lien

IEEE Electron Device Lettersno. 1 (2024): 60-63

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Self-Aligned Contact Doping for Performance Enhancement of Low-Leakage Carbon Nanotube Field Effect Transistors

Hsin-Yuan Chiu, Tzu-Ang Chao,Nathaniel S. Safron,Sheng-Kai Su,San-Lin Liew,Wei-Sheng Yun, Po-Sen Mao,Yu-Tung Lin, Vincent Duen-Huei Hou, Tung-Ying Lee,Wen-Hao Chang,Matthias Passlack,

ADVANCED ELECTRONIC MATERIALS（2024）

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Tunable EOT Scaling Down to 0. 55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment

HuiHsuan Li, ShangChiun Chen,YuHsien Lin,ChaoHsin Chien

ECS Journal of Solid State Science and Technology (2024)

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High-performance monolayer MoS₂ nanosheet GAA transistor

Bo-Jhih Chou,Yun-Yan Chung,Wei-Sheng Yun,Chen-Feng Hsu,Ming-Yang Li,Sheng-Kai Su,San-Lin Liew,Vincent Duen-Huei Hou,Chien-Wei Chen,Chi-Chung Kei, Yun-Yang Shen,Wen-Hao Chang,

NANOTECHNOLOGYno. 12 (2024)

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Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

Yun-Yan Chung,Wei-Sheng Yun, Bo-Jhih Chou,Chen-Feng Hsu, Shao-Ming Yu, G. Arutchelvan,Ming-Yang Li, Tsung-En Lee, Bo-Jiun Lin, Chen-Yi Li, Aslan Wei,D. Mahaveer Sathaiya,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Demonstration of HfO2-Based Gate Dielectric With similar to 0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Meng-Chien Lee,Wei-Lun Chen,Yi-Yang Zhao,Shin-Yuan Wang,Guang-Li Luo,Chao-Hsin Chien

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2023): 274-281

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Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

Ang-Sheng Chou,Ching-Hao Hsu,Yu-Tung Lin,Goutham Arutchelvan,Edward Chen,Terry Y.T. Hung,Chen-Feng Hsu, Sui-An Chou, Tsung-En Lee, Oreste Madia, Gerben Doornbos,Yuan-Chun Su,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Meng-Chien Lee,Wei-Lun Chen,Yi-Yang Zhao,Shin-Yuan Wang,Guang-Li Luo,Chao-Hsin Chien

IEEE Journal of the Electron Devices Society (2023): 274-281

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