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个人简介
Chih-Wei Hu was born in Taoyuan, Taiwan, in 1974. He received the Ph.D. degree in electronics engineering from the National Tsing-Hua University, Taiwan, in 2006. Since 2007, he has been an Engineer with the Department of Electronic and Optoelectronic Research Laboratories, ITRI, Taiwan. His research focuses on metal organic chemical vapor deposition growth technology on III–V compound devices including InGaAsP, AlGaInAs, and InGaN materials-based edge emitting laser diodes, vertical cavity surface emitting laser, InGaAs PIN, and GaN HEMT. He is currently a Project Manager with the Technology Development and Compound Business Division, Episil-Precision Inc, Taiwan.
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IEEE Journal of the Electron Devices Society (2018): 201-206
IEEE Transactions on Electron Devicesno. 10 (2017): 4065-4070
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