Daniel M. Fleetwood

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA|c|

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Papers32 papers

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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Z Zhang,A R Arehart, Erin C H Kyle,J Chen,En Xia Zhang,D M Fleetwood,R D Schrimpf,James S Speck,S A Ringel

Applied Physics Letters, (2015)

Cited by9Bibtex

Ultra-thin oxide growth on silicon during 10keV x-ray irradiation

Shweta Bhandaru,En Xia Zhang,D M Fleetwood,R A Reed,Robert A Weller,R R Harl,B R Rogers, Sharon M Weiss

Surface Science, (2015)

Cited by2Bibtex

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

Zheng Zhang, E Farzana, W Y Sun,J Chen,En Xia Zhang,D M Fleetwood,R D Schrimpf,B Mcskimming, Erin C H Kyle,James S Speck,A R Arehart,S A Ringel

Journal of Applied Physics, (2015)

Cited by8Bibtex

Proton irradiation-induced traps causing V T instabilities and RF degradation in GaN HEMTs

A Sasikumar,Zonghua Zhang, Praveen Kumar,En Xia Zhang,D M Fleetwood,R D Schrimpf,Paul Saunier, C Lee,S A Ringel,A R Arehart

(2015)

Cited by5Bibtex

Self-Healing of Proton Damage in Lithium Niobite ( ${\rm LiNbO}_{2}$ )

Joshua C Shank, M Brooks Tellekamp,En Xia Zhang, W Geoff Bennett,Michael W Mccurdy,D M Fleetwood,M L Alles,R D Schrimpf,W Alan Doolittle

IEEE Transactions on Nuclear Science, (2015)

Cited by2Bibtex

Bias Dependence of Total Ionizing Dose Effects in SiGe- ${{\rm SiO}_2}/{{\rm HfO}_2}\ p$ MOS FinFETs

C D Young,G Bersuker,D M Fleetwood,En Xia Zhang, Jordan Hachtel,Guo Xing Duan,Cher Xuan Zhang,Sokrates T Pantelides,M L Alles,R A Reed,R D Schrimpf

IEEE Transactions on Nuclear Science, (2014)

Bibtex

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Shaleen Jain,D M Fleetwood,R D Schrimpf,Nelson E Lourenco,En Xia Zhang,Zachary E Fleetwood,John D Cressler, Eleazar Kenyon,Troy D England

IEEE Transactions on Device and Materials Reliability, no. 3 (2014): 844-848

Cited by2EIWOSBibtex

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

R A Reed,En Xia Zhang, Nicolas J H Roche,Dale Mcmorrow,S Buchner,Nelson E Lourenco,Ani Khachatrian,D M Fleetwood,Partha S Chakraborty, Pauline Pakiamouzou,Adilson S Cardoso,Laleh Najafizadeh

IEEE Transactions on Nuclear Science, (2014)

Bibtex

Defects in GaN based transistors

A Sasikumar,A R Arehart,Stephen W Kaun,Jing Chen,En Xia Zhang,D M Fleetwood,R D Schrimpf,James S Speck,S A Ringel

(2014)

Cited by11Bibtex

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

R Arora,Zachary E Fleetwood,En Xia Zhang,Nelson E Lourenco,John D Cressler,D M Fleetwood,R D Schrimpf,A K Sutton,G Freeman,Brian J Greene

IEEE Transactions on Nuclear Science, no. 3 (2014): 1426-1432

Cited by9EIWOSBibtex

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

T D Loveless,En Xia Zhang,D M Fleetwood,L W Massengill, N Haddad,R D Schrimpf, S Jagannathan,T D Haeffner,J S Kauppila,M L Alles,A L Sternberg

IEEE Transactions on Nuclear Science, (2014)

Bibtex

Total Dose Effects in Tunnel-Diode Body-Contact SOI $n$ MOSFETs

Jing Chen,Jiexin Luo,Zhan Chai,Xi Wang,D M Fleetwood,En Xia Zhang, Yan Yang, Weiwei He,Kai Lu

IEEE Transactions on Nuclear Science, (2014)

Bibtex

Bias-Temperature Instabilities in Silicon Carbide MOS Devices

D M Fleetwood,En Xia Zhang, Xiao Shen,Cher Xuan Zhang,R D Schrimpf,Sokrates T Pantelides

(2014)

Cited by6Bibtex

TID and Displacement Damage Resilience of 1T1R ${\rm HfO}_2/{\rm Hf}$ Resistive Memories

Robert A Weller,Marcus H Mendenhall,M P King,M L Alles,D Linten,Michael W Mccurdy,Andrea Fantini,R Degraeve,En Xia Zhang,Nicholas C Hooten,R D Schrimpf,William G Bennett

IEEE Transactions on Nuclear Science, (2014)

Cited by2Bibtex

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$

J Mitard,D Linten,R D Schrimpf,M L Alles,R A Reed,D M Fleetwood,Michael W Mccurdy,D R Ball,Kai Ni, Erik D Funkhouser,William G Bennett,Nicholas C Hooten

IEEE Transactions on Nuclear Science, (2014)

Bibtex

Single-Event Transient Response of InGaAs MOSFETs

Taewoo Kim,Jianqiang Lin,William G Bennett,Michael W Mccurdy,A L Sternberg,Kai Ni,En Xia Zhang,Nicholas C Hooten,Jesus A Del Alamo,R D Schrimpf,R A Reed,D M Fleetwood

IEEE Transactions on Nuclear Science, (2014)

Cited by11Bibtex

Charge pumping in floating-body SOI FinFETs

D M Fleetwood,En Xia Zhang

(2013)

Bibtex

Total Ionizing Dose Radiation Effects in Al 2 O $_{3}$ -Gated Ultra-Thin Body In $_{0.7}$ Ga $_{0.3}$ As MOSFETs

X Sun,Fei Xue, Jianxin Chen,En Xia Zhang, Shaoyang Cui,J Lee,D M Fleetwood,T P Ma

IEEE Transactions on Nuclear Science, (2013)

Cited by9Bibtex

Impact of proton irradiation on deep level states in n-GaN

Z Zhang,A R Arehart, E Cinkilic,S A Ringel, Jikai Chen,En Xia Zhang,D M Fleetwood,R D Schrimpf,B Mcskimming,James S Speck

Applied Physics Letters, (2013)

Cited by32Bibtex

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of $n$ MOSFETs

En Xia Zhang,D M Fleetwood,N D Pate,R A Reed,Arthur F Witulski,R D Schrimpf

IEEE Transactions on Nuclear Science, no. 6 (2013): 4470-4475

Cited by17EIWOSBibtex

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Daniel M. FleetwoodBinding

Papers32 papers

Daniel M. Fleetwood