基本信息
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Career Trajectory
Bio
Daniel G. Georgiev (Senior Member, IEEE) received the M.S. degree in engineering physics from Sofia University, Bulgaria, in 1994, and the Ph.D. degree in electrical engineering from the University of Cincinnati, OH, USA, in 2003. In 2006, he joined The University of Toledo, where he is currently an Associate Professor and serves as the Graduate Program Director for the Department of Electrical Engineering and Computer Science. His research interests include electronic materials and devices, laser processing of materials, photovoltaics, and semiconducting glassy materials.
Research Interests
Papers共 135 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE electron device lettersno. 5 (2024): 873-876
Applied Physics Ano. 6 (2024): 1-10
Samuel K. Atwimah,Tolen Nelson,Prakash Pandey, Aidan P. Fox,Daniel G. Georgiev,Alan G. Jacobs,Andrew D. Koehler,Karl D. Hobart,Travis J. Anderson,Raghav Khanna
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.2663-2669, (2024)
2023 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.2496-2502, (2023)
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)pp.1-5, (2023)
2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANOpp.286-290, (2023)
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Author Statistics
#Papers: 134
#Citation: 3384
H-Index: 31
G-Index: 54
Sociability: 6
Diversity: 0
Activity: 1
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