E. B. Yakimov

Russian Academy of Sciences Institute of Microelectronics Technology and High Purity Materials Chernogolovka 142432 Russia Chernogolovka 142432 Russia

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Papers239 papers

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Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation

P. S. Vergeles, Yu. O. Kulanchikov,E. B. Yakimov

Journal of Electronic Materials, (2020)

Bibtex

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

E.E. Yakimov,E.B. Yakimov

Journal of Alloys and Compounds, (2020): 155470

Bibtex

Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods

P. S. Vergeles,E. B. Yakimov, V. I. Orlov

Journal of Electronic Materials, pp.1-5, (2020)

Bibtex

Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

P.S. Vergeles, V.I. Orlov,A. Y. Polyakov,E.B. Yakimov, Taehwan Kim,In-Hwan Lee

Journal of Alloys and Compounds, (2019): 181-186

Cited by1Bibtex

Crystal structure, vibrational spectroscopy and optical properties of a one-dimensional organic-inorganic hybrid perovskite of [NH 3 CH 2 CH(NH 3 )CH 2 ]BiCl 5

Seham K Abdel-Aal, Ahmed S Abdel-Rahman, Wafia M Gamal, Mohamed Abdel-Kader, Hany S Ayoub, Ashraf F El-Sherif, M F Kandeel, S Bozhko, E E Yakimov,E B Yakimov

Acta crystallographica Section B, Structural science, crystal engineering and materials, no. Pt 5 (2019): 880-886

WOSBibtex

Effects of Hydrogen Plasma Treatment Condition on Electrical Properties of β-Ga2O3

A. Y. Polyakov,In-Hwan Lee,N. B. Smirnov,E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, A. S. Shiko, Patrick H. Carey,F. Ren,S. J. Pearton

ECS Journal of Solid State Science and Technology, no. 11 (2019)

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra

A. Y. Polyakov,In-Hwan Lee,N. B. Smirnov,E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev,F. Ren, P. H. CareyIV,S. J. Pearton

Applied Physics Letters, no. 3 (2019): 032101

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Defects at the surface of β-Ga2O3 produced by Ar plasma exposure

A. Y. Polyakov,In-Hwan Lee,N. B. Smirnov,E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey,F. Ren,David J. Smith,S. J. Pearton

APL Materials, no. 6 (2019): 061102

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New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties

M. V. Dorokhin,V. A. Gavva,M. V. Ved,P. B. Demina, Yu M. Kuznetsov, I. V. Erofeeva,A. V. Nezhdanov, M. S. Boldin, E. A. Lantsev, A. A. Popov,V. N. Trushin,O. V. Vikhrova

RSC Advances, no. 29 (2019): 16746-16753

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Annealing and LEEBI Effects on the Stacking Fault Expansion and Shrinking in 4H‐SiC

Valery I. Orlov, Eugene E. Yakimov,Eugene B. Yakimov

Physica Status Solidi (a), pp.1900151, (2019)

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Simulation of the Properties of Betavoltaic Cells Based on Silicon and 63Ni Enriched Film

M. A. Polikarpov,E. B. Yakimov

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, no. 2 (2019): 285-288

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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov,N. B. Smirnov, I. V. Shchemerov,E. B. Yakimov,E. B. Yakimov,V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh,K. D. Shcherbachev, A. S. Shikoh, A. Kochkova

APL Materials, no. 5 (2019): 051103

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Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure

Yuriy O. Kulanchikov,Pavel S. Vergeles,Eugene B. Yakimov

Modern Electronic Materials, no. 4 (2019): 175-179

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Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters

S. M. Peshcherova,E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov,O. V. Feklisova, L. A. Pavlova, R. V. Presnyakov

Semiconductors, no. 1 (2019): 55-59

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Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell

A. A. Svintsov,E. B. Yakimov,M. V. Dorokhin,P. B. Demina, Yu. M. Kuznetsov

Semiconductors, no. 1 (2019): 96-98

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Thermoresistive Semiconductor SiC/Si Composite Material

S. K. Brantov,E. B. Yakimov

Semiconductors, no. 2 (2019): 220-223

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Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon

V. I. Orlov,N. A. Yarykin,E. B. Yakimov

Semiconductors, no. 4 (2019): 411-414

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Electrical Properties, Deep Levels and Luminescence Related to Fe in Bulk Semi-Insulating β-Ga2O3 Doped with Fe

A. Y. Polyakov,N. B. Smirnov, I. V. Schemerov, A. V. Chernykh,E. B. Yakimov, A. I. Kochkova, A. N. Tereshchenko,S. J. Pearton

ECS Journal of Solid State Science and Technology, no. 7 (2019)

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Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg)

A. Y. Polyakov,N. B. Smirnov, I. V. Shchemerov,E. B Yakimov,S. J. Pearton, Fan Ren, A. V. Chernykh, D. Gogova, A. I. Kochkova

ECS Journal of Solid State Science and Technology, no. 7 (2019)

Cited by1Bibtex

Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions

A. Y. Polyakov,N. B. Smirnov, I. V. Schemerov, A. V. Chernykh,E. B. Yakimov,E. B. Yakimov, A. I. Kochkova, Jiancheng Yang, Chaker Fares,F. Ren,S. J. Pearton

Journal of Applied Physics, no. 9 (2019): 095702

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E. B. YakimovBinding

Papers239 papers

E. B. Yakimov