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Emmanuel Augendre received the Graduate degree in electronics engineering and Ph.D. degree from the Institut National Polytechnique de Grenoble, France, in 1994 and 1999, respectively.
In 1994, he joined CEA-LETI, Grenoble, where he carried out the Ph.D. degree on high temperature characterization and compact modeling of SOI devices. From 1995 to 1996, he was with IEMN in Villeneuve d’Ascq, France, studying off-equilibrium transport in SOI devices as military service. Between 1998 and 2006, he was with IMEC in Leuven, Belgium, where he worked on front-end process integration of 0.18 m down to 45 nm CMOS technologies, both on bulk Si and SOI. He is now with CEA, LETI, MINATEC working on the application of direct bonding to Ge-based substrates and photonics.
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INTELLIGENT INTEGRATED SYSTEMS: DEVICES, TECHNOLOGIES, AND ARCHITECTURES (2013)
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