Feng Gao

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA|c|

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Papers11 papers

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Advanced power electronic devices based on Gallium Nitride (GaN)

Daniel Piedra,Bin Lu,Min Sun,Yuhao Zhang,Elison Matioli,Feng Gao, Jinwook Chung,Omair Irfan Saadat,Ling Xia,Mohamed Azize,Tomas Palacios

international electron devices meeting, (2015)

Bibtex

On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

Feng Gao,Di Chen,Harry L Tuller,Carl V Thompson,Tomas Palacios

Journal of Applied Physics, (2014)

Cited by26Bibtex

Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs

Feng Gao,Swee Ching Tan, Jesus A Del Alamo,Carl V Thompson,Tomas Palacios

Electron Devices, IEEE Transactions , no. 2 (2013): 437-444

Cited by48EIWOSBibtex

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyungseok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios

IEEE Transactions on Electron Devices, no. 7 (2013): 2224-2230

Cited by42EIWOSBibtex

Nanostructured GaN Transistors: Pushing the Limits of Linearity and Reliability

Elison Matioli,Bin Lu, Dong Seup Lee,Feng Gao, Tomas Palacios

The Japan Society of Applied Physics, (2013)

Bibtex

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

C Hodges,N Killat,Stephen W Kaun,M H Wong,Feng Gao,Tomas Palacios,U K Mishra,James S Speck,D Wolverson,M Kuball

Applied Physics Letters, (2012)

Cited by28Bibtex

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Feng Gao,Di Chen,Bin Lu,Harry L Tuller,Carl V Thompson, Stacia Keller, U K Mishra,Tomas Palacios

IEEE Electron Device Letters, no. 10 (2012): 1378-1380

Cited by39EIWOSBibtex

Die level thermal storage for improved cooling of pulsed devices

Richard Bonner,Tapan G Desai,Feng Gao, Xudong Tang,Tomas Palacios,Seungha Shin,Massoud Kaviany

(2011)

Cited by5Bibtex

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Feng Gao,Bin Lu, Libing Li,Stephen W Kaun,James S Speck,Carl V Thompson,Tomas Palacios

Applied Physics Letters, (2011)

Cited by69Bibtex

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

M ťapajna,Stephen W Kaun,M H Wong,Feng Gao,Tomas Palacios,U K Mishra,James S Speck,M Kuball

Applied Physics Letters, (2011)

Cited by69Bibtex

Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

R J T Simms,F Gao,Y Pei,Tomas Palacios,U K Mishra,M Kuball

Applied Physics Letters, (2010)

Cited by10Bibtex

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