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个人简介
Gemán Escalante received the Bachelor's degree in
electronics science and the Master's and Ph.D. degrees in semiconductor devices from the Autonomous University of
Puebla, Puebla, Mexico, in 2004, 2009, and 2014, respectively. From 2014 to 2016, he was a Postdoctoral Fellow with
the Department of Materials Physics, University Complutense of Madrid. He is currently a Research Associate in the
Institute of Sciences, Universidad Autonoma de Puebla. His research interests include the areas of growth of
nanostructured materials, deposition of thin films, characterization of semiconductors, and applications in gas
sensors.
研究兴趣
论文共 19 篇作者统计合作学者相似作者
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Jorge Edmundo Mastache Mastache,Orlando Soriano Vargas,Roberto Lopez, Francisco Morales Morales, Karin Montserrat Alvarez Gomez, Alfredo Benitez Lara,Antonio Coyopol, Jesus Namigtle Jimenez, Elizabeth Garcia Alcantara, Nicolas Cayetano Castro,German Escalante
Results in Chemistry (2023): 101230
Sergio Rodriguez-Castro, Jorge Narro Rios,German Escalante,Guillermo Santana, Aaron Sanchez-Juarez,Carlos alvarez-Macias
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