基本信息
浏览量:28
职业迁徙
个人简介
Haiqun Zheng (M'98) received the B.Sc. degree in electronic science from Jilin University, Changchun, China, in 1987, and the M.Eng. degree in electrical and electronic engineering from Nanyang Technological University (NTU), Singapore, in 1998.
From 1987 to 1995, he was an Engineer in the Institute of Semiconductors, Chinese Academy of Sciences, engaging in the molecular beam epitaxy (MBE) of III-V compound semiconductor structures. From 1996 to 2001, he was a Research Associate at the Microelectronics Centre at NTU, developing phosphorus-containing heterostructures for high-electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) applications using solid source MBE (SSMBE). Presently, he is a Principal Engineer with DenseLight Semiconductor Pte Ltd., Singapore, working on the growth and characterization on InP-based laser diode (LD) and HBT structures using metal-organic chemical vapor deposition (MOCVD). His current research interests include MBE and MOCVD growth and characterization of compound semiconductors and their heterostructures for microelectronic and optoelectronic applications and device fabrication and characterization. He is coauthor of more than 100 journal and conference papers.
Mr. Zheng is a member of the American Vacuum Society.
研究兴趣
论文共 46 篇作者统计合作学者相似作者
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crossref(2023)
Materials Characterization (2023)
arXiv (Cornell University) (2022)
Chinese Optics Lettersno. 9 (2022): 093201-093201
Journal of instrumentationno. 11 (2021): P11003-P11003
The Cambridge Structural Database (2021)
Chongqing Yixueno. 21 (2020): 3647-3651
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Wuli Xuebaono. 21 (2020): 366-371
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The Cambridge Structural Database (2020)
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作者统计
#Papers: 46
#Citation: 473
H-Index: 12
G-Index: 21
Sociability: 7
Diversity: 2
Activity: 6
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