Hagyoul Bae

Hagyoul Bae (Member, IEEE) received the Ph.D. degree from the Korea Advanced Institute of Science and Technology, Daejeon, South Korea, in 2018. He is currently an Assistant Professor with the Department of Electrical Engineering, Jeonbuk National University, Jeonju, South Korea. From March 2020 to February 2022, he was a Staff Researcher with the Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd. From March 2018 to February 2020, he was a Postdoctoral Researcher with Peide D. Ye Group, Purdue University, West Lafayette, IN, USA. From March 2007 to June 2009, he was with the Army as a Signal Officer from ROTC and also a Researcher with Kookmin University, Seoul, South Korea from 2012 to 2013. He won the IEEE EDS Ph.D. Student Fellowship in 2016. He is also supported by the Global Ph.D. Fellowship Program (2014–2017) from NRF Korea. His research interests include fabrication and characterization of HZO ferroelectric logic/memory and synaptic devices for AI applications and oxide transistors, such as Ga2O3, IGZO, and copper oxide, nano CMOS, memristor-based logic-in-memory, wearable devices/circuit, 2D TMDCs-based FETs, and their device physics.