基本信息
views: 14
Career Trajectory
Bio
Hidekatsu Onose was born in 1958. He received the M.S. degree from Tohoku University, Sendai, Japan, in 1984.
In 1984, he joined the Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Japan, where he has been engaged in the research and development of Si epitaxial growth, FRAM devices, and Si and SiC highpower devices. Since 2006, he has been engaged in the development of SiC high-power devices with the Central Research Laboratory, Hitachi, Ltd.
Research Interests
Papers共 33 篇Author StatisticsCo-AuthorSimilar Experts
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期刊级别
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Takashi Ishigaki,Seiichi Hayakawa,Tatsunori Murata,Toshihito Tabata, Katsuyuki Asaka,Koyo Kinoshita,Tetsuo Oda,Kan Yasui,Toshiaki Morita,Daisuke Kawase,Yuji Takayanagi,Renichi Yamada,Katsuaki Saito,Toru Masuda,Hiroshi Miki,Masakazu Sagawa,Hidekatsu Onose,Kumiko Konishi,Ryusei Fujita,Hiroyuki Matsushima,Shintaroh Sato,Akio Shima
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-5, (2018)
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PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-6, (2017)
Cited0Views0EIWOSBibtex
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Renichi Yamada,Norifumi Kameshiro,Yoshiaki Toyota,Takashi Hirao,Kan Yasui,Hidekatsu Onose,Kazuhiro Mochizuki,Hiroshi Miki,Natsuki Yokoyama,Hiroyuki Okino, Hiroyuki Matsuhima,Tetsuo Oda, Jiro Hasegawa,Mutsuhiro Mori
mag(2012)
Cited23Views0Bibtex
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mag(2011)
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mag(2011)
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Author Statistics
#Papers: 33
#Citation: 230
H-Index: 8
G-Index: 14
Sociability: 5
Diversity: 0
Activity: 0
Co-Author
Co-Institution
D-Core
- 合作者
- 学生
- 导师
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