Hironori Okumura

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Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)

Hironori Okumura, Yuji Kato,Takayoshi Oshima,Tomás Palacios

Japanese Journal of Applied Physics, (2019)

Bibtex

Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution

Hironori Okumura

Japanese Journal of Applied Physics, no. 2 (2019): 026502

Bibtex

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al_0.8Ga_0.2N/AlN on SiC With Drain Current Over 100 mA/mm

Jori Lemettinen, Nadim Chowdhury,Hironori Okumura, Iurii Kim,Sami Suihkonen,Tomás Palacios

IEEE Electron Device Letters, no. 8 (2019): 1245-1248

EIWOSBibtex

N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

Jori Lemettinen,Hironori Okumura,Hironori Okumura,Tomás Palacios,Sami Suihkonen

Applied Physics Express, no. 10 (2018): 101002

Bibtex

AlN metal–semiconductor field-effect transistors using Si-ion implantation

Hironori Okumura,Hironori Okumura,Sami Suihkonen, Jori Lemettinen,Akira Uedono,Yuhao Zhang,Daniel Piedra,Tomás Palacios

Japanese Journal of Applied Physics, no. 4 (2018)

Bibtex

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Jori Lemettinen,Hironori Okumura,Hironori Okumura,I. Kim, Christoffer Kauppinen,Tomas Palacios,Sami Suihkonen

Journal of Crystal Growth, (2018): 12-16

Cited by1Bibtex

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Jori Lemettinen,Hironori Okumura,Hironori Okumura,I. Kim,M. Rudzinski,J. Grzonka,Tomas Palacios,Sami Suihkonen

Journal of Crystal Growth, (2018): 50-56

Cited by3Bibtex

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Yuhao Zhang,Zhihong Liu,Marko J. Tadjer,Min Sun,Daniel Piedra,Christopher R. Hatem,Travis J. Anderson,Lunet E Luna, Anindya Nath,Andrew D. Koehler,Hironori Okumura,Jie Hu

IEEE Electron Device Letters, no. 8 (2017): 1097-1100

Cited by9EIWOSBibtex

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Akira Uedono,Marco Malinverni,D. Martin,Hironori Okumura,Shoji Ishibashi,N. Grandjean

Journal of Applied Physics, no. 24 (2016): 245702

Bibtex

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Hironori Okumura,Hironori Okumura,D. Martin,N. Grandjean

Applied Physics Letters, no. 25 (2016): 252101

Bibtex

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Hironori Okumura,Hironori Okumura,D. Martin,Marco Malinverni,N. Grandjean

Applied Physics Letters, no. 7 (2016): 072102

Bibtex

Systematic investigation of the growth rate of β-Ga

Hironori Okumura,Masao Kita,Kohei Sasaki,Akito Kuramata,Masataka Higashiwaki,James S Speck

Applied Physics Express, (2014)

Bibtex

Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

Hironori Okumura,Masao Kita,Kohei Sasaki,Akito Kuramata,Masataka Higashiwaki,James S Speck

Applied Physics Express, (2014)

Cited by43Bibtex

Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps

Hironori Okumura,Tsunenobu Kimoto,Jun Suda

Applied Physics Letters, (2014)

Cited by4Bibtex

Growth diagram of N-face GaN (000 1 ¯ ) grown at high rate by plasma-assisted molecular beam epitaxy

Hironori Okumura,B Mcskimming, Thomas Huault, Catherine Chaix,James S Speck

Applied Physics Letters, (2014)

Cited by9Bibtex

Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Mitsuaki Kaneko, Ryosuke Kikuchi,Hironori Okumura,Tsunenobu Kimoto,Jun Suda

Japanese Journal of Applied Physics, (2013)

Cited by2Bibtex

Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

Mitsuaki Kaneko, Ryosuke Kikuchi,Hironori Okumura

(2013)

Bibtex

Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)

Mitsuaki Kaneko,Hironori Okumura,Ryota Ishii,Mitsuru Funato,Yoichi Kawakami,Tsunenobu Kimoto,Jun Suda

Applied Physics Express, (2013)

Cited by8Bibtex

AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

Ryosuke Kikuchi,Hironori Okumura, Mitsuaki Kaneko,Tsunenobu Kimoto,Jun Suda

Applied Physics Express, (2012)

Cited by4Bibtex

Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000\bar{1}) Substrate by Molecular-Beam Epitaxy

Hironori Okumura,Tsunenobu Kimoto,Jun Suda

Japanese Journal of Applied Physics, (2012)

Bibtex

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Papers26 papers

Hironori Okumura