His professional work is on semiconductor science and engineering. He has also been working on semiconductor material synthesis, characterization, and device demonstration. He began his work on semiconductor SiC in 1968. He has worked on blue light-emitting diodes of SiC, heteroepitaxial growth of SiC on Si, and homoepitaxial growth of SiC on SiC substrates. He has greatly contributed to the progress in SiC devices by bringing high-quality epitaxial layers grown by the concept of step-controlled epitaxy, high-performance Schottky barrier diodes, and high-channel electron mobility in SiC MOSFETs. He is the author of more than 400 papers published in scientific journals and international conference proceedings. He is one of the three editors of Silicon Carbide I and II (Akademie, 1997) and Silicon Carbide Recent Major Advances (Springer, 2003).,Dr. Matsunami is a Fellow of Engineers and a member of the Institute of Electrical Engineers of Japan, the Japan Society of Applied Physics, and the Japanese Association of Crystal Growth. He is the recipient of the Outstanding Research Award from the Ministry of Education, the Japan Society of Applied Physics, and the Institute of Electronics, Information, and Communication.
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