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Hsiang-Lan Lung (M’01–SM’07) received the Ph.D. degree from National Tsing Hua University, Hsinchu, Taiwan.
He has more than 20 years of experience in semiconductor memory technologies. More than 10 years of his experience was dedicated to phase change memory (PCM) technology. He has been working at IBM T. J. Watson Research Center, New York, USA, as a joint project manager of phase change memory since 2004. In the last 12 years, he has been deeply involved in the R&D of materials, devices, process integration, chips design, and system applications of PCM. Currently, he is a Deputy Director of Emerging Central Lab of Macronix. He started his career at Macronix, Hsinchu, Taiwan, in 1996 as a process integration engineer in charge of the 0.6/
$0.5~\mu {\mathrm { m}}$
logic foundry processes. After that, he was involved in the production and R&D of SRAM, embedded Flash, embedded MROM, SONOS Flash, embedded SONOS Flash, FeRAM and PCM technologies. He has authored or co-authored 38 IEDM/VLSI/ISSCC papers and served as an IEDM memory technology committee member (2012–2013).
Dr. Lung is a Master Inventor who has been granted 230 US patents. He has given talks, tutorials, and short courses at VLSI, IEDM, ITRS, SEMITEC, IMW, MRS, ICMTD, ICSSICT, and CSTIC.
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IEEE J. Solid State Circuitsno. 1 (2017): 218-228
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2016 IEEE International Solid-State Circuits Conference (ISSCC)pp.134-135, (2016)
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