Hyung-Seok Lee

Department of Precision Engineering and Mechatronics, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon, 305-701, South Korea

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Papers37 papers

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Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

Akira Uedono,Tatsuya Fujishima,Yu Cao,Sameer Joglekar,Daniel Piedra,Hyungseok Lee, Yang Zhang, Nakaaki Yoshihara,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,Wayne Johnson

Junction Technology, pp.1-5, (2014)

EIWOSBibtex

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyungseok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios

IEEE Transactions on Electron Devices, no. 7 (2013): 2224-2230

Cited by42EIWOSBibtex

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Tatsuya Fujishima,Sameer Joglekar,Daniel Piedra,Hyungseok Lee,Yuhao Zhang,Akira Uedono,Tomas Palacios

Applied Physics Letters, (2013)

Cited by28Bibtex

AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology

Zhihong Liu,Min Sun,Hyungseok Lee,M Heuken,Tomas Palacios

Applied Physics Express, (2013)

Cited by18Bibtex

Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

Hyungseok Lee, Kyungwoo Ryu,Min Sun,Tomas Palacios

IEEE Electron Device Letters, no. 2 (2012): 200-202

Cited by43EIWOSBibtex

3000-V 4.3- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Hyungseok Lee,Daniel Piedra,Min Sun, Xiang Gao,Shiping Guo,Tomas Palacios

IEEE Electron Device Letters, (2012)

Cited by105Bibtex

Multifunctional silicon inspired by a wing of male Papilio ulysse

Sang Ho Yun,Hyungseok Lee,Young Ha Kwon,Mats Gothelid,Sang Mo Koo,Lars Wagberg,U O Karlsson,Jan Linnros

Applied Physics Letters, (2012)

Cited by4Bibtex

Scaling of InAlN/GaN power transistors

Daniel Piedra,Hyung-Seok Lee,Tomas Palacios,Xiang Gao,Shiping Guo

ESSDERC, pp.314-317, (2012)

Cited by1EIBibtex

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Min Sun,Hyungseok Lee,Bin Lu,Daniel Piedra,Tomas Palacios

Applied Physics Express, (2012)

Cited by27Bibtex

A GIS-based analysis of potential sewer choke in Western Sydney Region

Samsung Lim,Fadhillah Norzahari,Hyungseok Lee

Ksce Journal of Civil Engineering, no. 4 (2010): 601-612

Cited by1Bibtex

OPTICAL SENSOR INTERROGATION SYSTEM BASED ON FDML WAVELENGTH SWEPT LASER

Changseok Kim,Myungyung Jeong,Jaeseok Park,Eunjoo Jung,Hyungseok Lee

(2010)

Cited by14Bibtex

Broadband Wavelength-swept Raman Laser for Fourier-domain Mode Locked Swept-source OCT

Hyung-Seok Lee,Eun-Joo Jung,Myung-Yung Jeong,Chang-Seok Kim

Journal of The Optical Society of Korea, no. 3 (2009): 316-320

Cited by12Bibtex

How to reach consumers in a market where DTC is not allowed

Chang Dae Ham,Jong Woo Jun,Hyung-Seok Lee

Journal of Medical Marketing, no. 2 (2008): 159-168

Cited by3Bibtex

Fabrication of 2700-V 12-{m}Omega * {cm}(2) Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

Reza Ghandi,Hyungseok Lee,Martin Domeij,Benedetto Buono,C M Zetterling,Mikael Ostling

IEEE Electron Device Letters, (2008)

Bibtex

Fabrication of 2700-V 12- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H- SiC BJTs With Common-Emitter Current Gain of 50

Reza Ghandi,Hyungseok Lee,Martin Domeij,Benedetto Buono,C M Zetterling,Mikael Ostling

IEEE Electron Device Letters, no. 10 (2008): 1135-1137

Cited by24EIWOSBibtex

Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

R. Ghandi,Hyung-Seok Lee,M. Domeij,B. Buono,C.-M. Zetterling,M. Ostling

IEEE Electron Device Letters, no. 10 (2008): 1135-1137

Cited by1EIWOSBibtex

Fabrication of 2700-V 12- Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

Reza Ghandi,Hyungseok Lee,Martin Domeij,Benedetto Buono,Carlmikael Zetterling,Mikael Ostling

IEEE Electron Device Letters, no. 10 (2008): 1135-1137

EIWOSBibtex

High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

Hyung-Seok Lee,Martin Domeij,Reza Ghandi,Carl-Mikael Zetterling,Mikael Ostling

IEEE Transactions on Electron Devices, no. 8 (2008): 1894-1898

Cited by15EIWOSBibtex

Corrections to “Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation”

Hyung-Seok Lee,Martin Domeij,Carl-Mikael Zetterling,Mikael Ostling

IEEE Transactions on Electron Devices, no. 9 (2008): 2531-2531

EIWOSBibtex

Image Watermark Method Using Multiple Decoding Keys

Hyung-Seok Lee,Dong-Hoan Seo,Kyu-Bo Cho

Korean Journal of Optics and Photonics, no. 4 (2008): 262-269

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