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We are engaged to establish basic knowledge of crystal defects on an atomic scale in semiconductors. For the purpose, we are characterizing various properties of defects, i.e. atomic and electronic structures, nucleation and dynamic modifications as well as mutual reactions/ complex formation in semiconductors as Si, SiGe, Ge, SiC, GaN, ZnO, SiC, and so forth by using multi-techniques in a wide scale range and multi-dimension. The research is extended to control of defect states for advanced materials with ultimate functions as "Defect Science".
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Japanese Journal of Applied Physicsno. 3 (2024)
Applied Surface Sciencepp.159965, (2024)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYno. 6 (2023): 064004-064004
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APPLIED PHYSICS LETTERSno. 8 (2022)
ECS Meeting Abstractsno. 32 (2022): 1238-1238
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Ryo Yokogawa,Haruki Takeuchi, Yutaka Hara, Yasutomo Arai,Ichiro Yonenaga, Sylvia Yuk Yee Chung,Motohiro Tomita,Hiroshi Uchiyama,Takanobu Watanabe,Atsushi Ogura
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ECS Meeting Abstractsno. 12 (2021): 629-629
The Japan Society of Applied Physics (2021)
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