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In-Hwan Lee

School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University , Jeonju, Korea

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Spatial location of the E c -0.6 eV electron trap in AlGaN/GaN heterojunctions

Inhwan Lee,A Y Polyakov, Nikolai B Smirnov,Cheolkoo Hahn,S J Pearton

Journal of Vacuum Science & Technology B, (2014)

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Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Alexander Y. Polyakov,Nickolai B. Smirnov,Cheong Hyun Roh,Cheol-Koo Hahn,Han-Su Cho,Elena A. Kozhukhova,Anatolyi V. Govorkov,Roman Valerievich Ryzhuk,Nikolay Ivanovich Kargin,In-Hwan Lee

Nanotechnology, IEEE Transactions , no. 1 (2013): 151-159

Cited by3EIWOSBibtex

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

A Y Polyakov,N B Smirnov,Minwoo Ha,Cheolkoo Hahn,E A Kozhukhova,A V Govorkov, R V Ryzhuk, N I Kargin,Hansu Cho,Inhwan Lee

Journal of Alloys and Compounds, (2013): 17-23

Cited by7Bibtex

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