Inge Asselberghs - Department of Chemistry, University of Leuven

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Direct Assessment of Defective Regions in Monolayer MoS₂ Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Albert Minj,Vivek Mootheri,Sreetama Banerjee,Ankit Nalin Mehta,Jill Serron,Thomas Hantschel,Inge Asselberghs,Ludovic Goux,Gouri Sankar Kar,Marc Heyns,Dennis H. C. Lin

ACS Nano (2024)

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Advanced EUV patterning of 2D TMDs for CMOS integration

Vina Faramarzi, Etienne de Poortere, Syam Parayil Venugopalan, Pieter Woltgens, Youngtag Woo,Mark van de Kerkhof, Pawan Kumar, Henry Medina Silva,Pierre Morin,Inge Asselberghs,Chelsey Dorow, Kevin O'Brien,

Novel Patterning Technologies 2024 (2024)

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Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

Albert Minj,Vivek Mootheri,Sreetama Banerjee,Ankit Nalin Mehta,Jill Serron,Thomas Hantschel,Inge Asselberghs,Ludovic Goux,Gouri Sankar Kar,Marc Heyns,Dennis H C Lin

ACS nano (2024)

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The Promise of 2-D Materials for Scaled Digital and Analog Applications

Devin Verreck,Piet Wambacq,Maarten Van De Put,Zubair Ahmed,Quentin Smets,Aryan Afzalian,Rutger Duflou,Xiangyu Wu,Gioele Mirabelli,Rongmei Chen,Inge Asselberghs,Gouri Sankar Kar

ISSCCpp.394-395, (2023)

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Overview of scalable transfer approaches to enable epitaxial 2D material integration

Steven Brems,Souvik Ghosh,Quentin Smets,Marie-Emmanuelle Boulon, Andries Boelen,Koen Kennes,Hung-Chieh Tsai,Francois Chancerel,Clement Merckling,Pieter-Jan Wyndaele,Jean-Francois De Marneffe,Tom Schram,

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DATpp.1-2, (2023)

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Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer

S. Ghosh,Quentin Smets, S. Banerjee,Tom Schram, K. Kennes, R. Verheyen, P. Kumar, M.-E. Boulon,Benjamin Groven, H. M. Silva,S. Kundu,Daire Cott,

VLSI Technology and Circuitspp.1-2, (2023)

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Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

S. Kundu, D. H. van Dorp, T. Schram,Q. Smets, S. Banerjee,B. Groven, D. Cott, S. Decoster, P. Bezard, F. Lazzarino,K. Banerjee, S. Ghosh,

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

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Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach

S. Kundu, D. H. van Doip,Tom Schram,Quentin Smets, S. Banerjee,Benjamin Groven,Daire Cott, S. Decoster, P. Bezard, F. Lazzarino,K. Banerjee, S. Ghosh,

VLSI Technology and Circuitspp.1-2, (2023)

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Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Haonan Tang, Sergej Pasko,Simonas Krotkus, Thorsten Anders, Cornelia Wockel,Jan Mischke,Xiaochen Wang,Ben Conran,Clifford McAleese, Ken Teo,Sreetama Banerjee, Henry Medina Silva,

Journal of Crystal Growth (2023): 127111

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Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

Tom Schram,Surajit Sutar,Iuliana Radu,Inge Asselberghs

Adv Mater（2022）

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