J. L. Freeouf

Department of Electrical and Computer Engineering, Oregon Health & Sciences University, Beaverton, Oregon

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Papers77 papers

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Coaxial tips for infrared NSOM

Michael D Hopkins,Moshood K Morakinyo,Shankar B Rananavare,Andres La Rosa,J L Freeouf

Nanotechnology, pp.531-534, (2011)

EIWOSBibtex

Microstructure of Metal-GaAs Interfaces

T S Kuan,P E Batson,J L Freeouf,Thomas N Jackson, E L Wilkie

(2011)

Cited by7Bibtex

Dual Mode AFM/Ellipsometer Imaging

Jianghua Bai,J L Freeouf,Andres H La Rosa

(2010)

Bibtex

Dielectric and optical properties of epitaxial rare-earth scandate films and their crystallization behavior

H. M. Christena,G. E. Jellison,I. Ohkubo,S. Huang,M. E. Reeves,E. Cicerrella,J. L. Freeouf,Y. Jia,D. G. Schlom

Applied Physics Letters, (2006)

Cited by78Bibtex

Growth and properties of epitaxial rare-earth scandate thin films

T. Heeg,J. Schubert,C. Buchal,E. Cicerrella,J. L. Freeouf,W. Tian,Y. Jia,D. G. Schlom

Applied Physics A, no. 1 (2006): 103-106

Cited by31Bibtex

Near edge x-ray absorption spectroscopy: a novel approach for determining conduction band edge states in transition metal oxide gate dielectrics

Gerry Lucovsky, Yi Zhang,J L Whitten,D G Schlom,J L Freeouf

PHYSICA SCRIPTA, (2005): 335-338

Bibtex

Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications

T. Heeg,M. Wagner,J. Schubert,Ch. Buchal,M. Boese,M. Luysberg,E. Cicerrella,J. L. Freeouf

Microelectronic Engineering, no. C (2005): 150-153

Cited by24EIBibtex

Optical properties of La-based high-K dielectric films

E. Cicerrella,J. L. Freeouf,L. F. Edge,D. G. Schlom,T. Heeg,J. Schubert,S. A. Chambers

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, no. 6 (2005): 1676-1680

Cited by38Bibtex

Near Edge XRay Absorption Spectroscopy a Novel Approach for Determining Conduction Band Edge States in Transition Metal Oxide Gate Dielectrics

G. Lucovsky,Y. Zhang,J. L. Whitten,D. G. Schlom,J. L. Freeouf

Physica Scripta, (2005)

Bibtex

Measurements of the Band Offsets Between Amorphous LaAlO3 and Silicon

Lisa F Edge,D G Schlom,S A Chambers,E Cicerrella,J L Freeouf,B Hollander,J Schubert

Applied Physics Letters, (2004)

Cited by177Bibtex

Electroluminescence from silicon nanowires

J Huo,R Solanki,J L Freeouf,J R Carruthers

NANOTECHNOLOGY, no. 12 (2004): 1848-1850

Cited by1Bibtex

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex Oxides

G. Lucovsky, Y. Zhang,J. L. Whitten,D. G. Schlom,J. L. Freeouf

Microelectronic Engineering - Special issue: Proceedings of the 13th biennial conference on insulati..., no. 1-4 (2004): 288-293

Cited by30EIBibtex

Directed growth of nickel silicide nanowires

C A Decker,R Solanki,J L Freeouf, J R Carruthers,David R Evans

Applied Physics Letters, (2004)

Cited by59Bibtex

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

G. Lucovsky,J. G. Hong,C. C. Fulton,Y. Zou,R. J. Nemanich,H. Ade,D. G. Scholm,J. L. Freeouf

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, no. 10 (2004): 2221-2235

Cited by33Bibtex

Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal-Rare Earth Ternary Oxides

G. Lucovsky,Yu Zhang,J.L. Whitten, D.G. Scholm,J.L. Freeouf

The Japan Society of Applied Physics, (2003)

Bibtex

Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

G Lucovsky, Yu Zhang, J L Whitten,D G Scholm,J L Freeouf

(2003)

Bibtex

Atomic layer deposition of ZnSe/CdSe superlattice nanowires

R Solanki,Jingsi Huo,J L Freeouf, Bryant A Miner

Applied Physics Letters, (2002)

Cited by87Bibtex

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Seung-Gu Lim,Stas Kriventsov,Thomas N. Jackson,J. H. Haeni,D. G. Schlom,A. M. Balbashov,R. Uecker,P. Reiche,J. L. Freeouf,G. Lucovsky

Journal of Applied Physics, (2002)

Cited by365Bibtex

Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry

Seunggu Lim,Thomas N Jackson,W C Mitchel, R Bertke,J L Freeouf

Applied Physics Letters, (2001)

Cited by2Bibtex

Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling

Miguel A Munoz, Kangliang Wei,Fred H Pollak,J L Freeouf,C A Wang,G W Charache

Journal of Applied Physics, (2000)

Cited by32Bibtex

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Papers77 papers

J. L. Freeouf