Jin-Woo Ju

School of Advanced Materials Engineering and Research Center of Industrial Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Republic of Korea

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Papers37 papers

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Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy

An-Na Cha, Seungwan Bang, Hokyun Rho,Hyojung Bae,Dae-Woo Jeon,Jin-Woo Ju,Soon-Ku Hong,Jun-Seok Ha

Applied Physics Letters, no. 9 (2019): 091605

Bibtex

Highly Stable Bulk GaN Photoanode Grown by Hydride Vapor-Phase Epitaxy for Photoelectrochemical Water Splitting

Hyojung Bae, Haseong Kim,Jin-Woo Ju,Dae-Woo Jeon,Sang-Wan Ryu, Youngboo Moon,Jun-Seok Ha

Journal of The Electrochemical Society, no. 4 (2019)

Bibtex

Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates

Seung-Jae Lee,Seong-Ran Jeon,Jin-Woo Ju,Jong Hyeob Baek, Jie Su, Soo Min Lee, Dong S Lee,Cheul-Ro Lee

Journal of nanoscience and nanotechnology, no. 2 (2019): 892-896

WOSBibtex

Reduced structural anisotropy of (1122) semipolarGaN by using epitaxial lateral overgrowth

조한수, Jonghee Hwang, 전대우,Ju Jin Woo

Journal of Ceramic Processing Research, no. 9 (2016): 974-977

Bibtex

Improved performance of metal foil-based dye-sensitized solar cells with low porosity and short length of TiO 2 nanotube underlayer

Myoung Kim, Kyungwon Lee,Leewoon Jang,Daewoo Jeon,Jinwoo Ju,Hogyeong Yun,Inhwan Lee

Electrochimica Acta, (2014): 610-614

Cited by7Bibtex

High Efficiency InGaN Blue Light-Emitting Diode With ${>}{\rm 4}\hbox{-}{\rm W}$ Output Power at 3 A

Tak Jeong, Hyungjo Park,Jinwoo Ju,Hwa Sub Oh,Jonghyeob Baek,Junseok Ha, G Ryu,Hanyoul Ryu

IEEE Photonics Technology Letters, no. 7 (2014): 649-652

Cited by4EIWOSBibtex

Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO 2 nanoparticles

Daewoo Jeon,Leewoon Jang,Hansu Cho, Kyeongseob Kwon, Myeongji Dong,A Y Polyakov,Jinwoo Ju, Taehoon Chung,Jong Hyeob Baek,Inhwan Lee

Optics Express, (2014)

Cited by6Bibtex

Fabrication and characterization of high efficiency green nanopillar LED

Jinwoo Ju,Jong Hyeob Baek,Seungjae Lee,Daewoo Jeon,Jaewoo Park,Junghun Choi,Leewoon Jang,Inhwan Lee

Journal of Crystal Growth, (2013): 332-335

Cited by5Bibtex

Improved Photoluminescence Efficiency in UV Nanopillar Light Emitting Diode Structures by Recovery of Dry Etching Damage

Young Ho Song,Seongran Jeon,Jinwoo Ju,Jong Hyeob Baek,Inhwan Lee, Daewoo Jeon,Leewoon Jang,Juwon Jeon, Jaewoo Park

Journal of Nanoscience and Nanotechnology, (2013)

Cited by6Bibtex

Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching

Leewoon Jang,Daewoo Jeon,A Y Polyakov,Hansu Cho,Jinhyeon Yun, Dongseob Jo,Jinwoo Ju,Jonghyeob Baek,Inhwan Lee

Applied Physics Express, (2013)

Cited by11Bibtex

Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light‐Emitting Diodes by Ag and Ag/SiO2 Nanoparticles

Leewoon Jang,Daewoo Jeon,Myoung Kim,Juwon Jeon,A Y Polyakov,Jinwoo Ju,Seungjae Lee,Jonghyeob Baek,Jinkyu Yang,Inhwan Lee

ADVANCED FUNCTIONAL MATERIALS, no. 13 (2012): 2728-2734

Cited by58Bibtex

Photoluminescence Enhancement in GaN/InGaN Multi-Quantum Well Structures as a Function of Quantum Well Numbers: Coupling Behaviors of Localized Surface Plasmon

Leewoon Jang,Daewoo Jeon,Juwon Jeon, Minkyu Kim,A Y Polyakov,Jinwoo Ju,Seungjae Lee,Jonghyeob Baek,Munseok Jeong, Yonghwan Kim,Inhwan Lee

Journal of The Electrochemical Society, (2012)

Cited by4Bibtex

Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO 2 nanoparticles

Leewoon Jang,Daewoo Jeon,Trilochan Sahoo, Dongseob Jo,Jinwoo Ju,Seungjae Lee,Jonghyeob Baek,Jinkyu Yang,Junghoon Song,A Y Polyakov,Inhwan Lee

Optics Express, (2012)

Cited by31Bibtex

Separation of laterally overgrown GaN template by using selective electrochemical etching

Daewoo Jeon,Hansu Cho,Jaewoo Park,Leewoon Jang,Myoung Kim,Juwon Jeon,Jinwoo Ju,Jong Hyeob Baek,Inhwan Lee

Journal of Alloys and Compounds, (2012): 59-62

Cited by10Bibtex

Chemical lift-off of (11–22) semipolar GaN using periodic triangular cavities

Daewoo Jeon,Seungjae Lee,Tak Jeong,Jong Hyeob Baek,Jaewoo Park,Leewoon Jang,Myoung Kim,Inhwan Lee,Jinwoo Ju

Journal of Crystal Growth, no. 1 (2012): 134-138

Cited by4Bibtex

High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology

Seungjae Lee,K H Kim,Jinwoo Ju,Tak Jeong,Cheulro Lee,Jong Hyeob Baek

Applied Physics Express, (2011)

Cited by24Bibtex

Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures

Leewoon Jang,Jinwoo Ju,Juwon Jeon,Daewoo Jeon,Junghun Choi,Seungjae Lee,Seongran Jeon,Jonghyeob Baek,Emre Sari,Hilmi Volkan Demir,Hyungdo Yoon,Sungmin Hwang

(2011)

Cited by6Bibtex

Effects of Ar/O_2 Gas Ratio on ZnO Films Prepared by Using Ion Beam Deposition

Inhwan Lee,Myoung Jin Kim,Juwon Jeon, Daewoo Jeon,Trilochan Sahoo,Mihee Lee, Ruda Lee,Leewoon Jang,Jinwoo Ju, Young Je Jo, Jin Kwak

Journal of the Korean Physical Society, (2010)

Bibtex

High quality of a-plane (11-20) GaN using a high pressure buffer layer

J. H. Choi,Lee-Woon Jang,Jin-Woo Ju, S. M. Hwang,In-Hwan Lee

The Japan Society of Applied Physics, (2009)

Bibtex

Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,A M Dabiran,P P Chow,A M Wowchak,Inhwan Lee,Jinwoo Ju,S J Pearton

Journal of Applied Physics, (2009)

Cited by7Bibtex

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Papers37 papers

Jin-Woo Ju