Jung-Yu Hsieh

Technology Development Center, Macronix International Co. Ltd. No. 16, Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, ROC

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Papers44 papers

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Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory

Jeng-Hwa Liao, Zong-Jie Ko, Yu-Min Lin,Hsing-Ju Lin,Jung-Yu Hsieh,Ling-Wu Yang,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

Solid-state Electronics, (2018): 39-43

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Study on the improved thermal stability of cobalt silicide film by using cryogenic carbon PAI

Jungyi Guo,Jenghwa Liao,Yumin Lin,Chunmin Cheng,Jungyu Hsieh,Lingwu Yang,Tahone Yang,Kuangchao Chen,Chihyuan Lu

Ion Implantation Technology, pp.1-3, (2014)

EIWOSBibtex

A study of surface condensation defect improvement after cryogenic implantation

Yumin Lin,Jungyi Guo,Jenghwa Liao,Hsinju Lin,Jungyu Hsieh,Lingwu Yang,Tahone Yang,Kuangchao Chen,Chihyuan Lu

Ion Implantation Technology, pp.1-4, (2014)

EIWOSBibtex

NONVOLATILE MEMORY DEVICE AND METHOD FOR MAKING THE SAME

Chipin Lu,Jungyu Hsieh,Lingwuu Yang

(2013)

Cited by1Bibtex

Study of charge trapping characteristics of SONOS with various trapping layers using gate-sensing and channel-sensing (GSCS) method

Jenghwa Liao,Hsingju Lin,Hangting Lue,Peiying Du,Jungyu Hsieh,Lingwu Yang,Tahone Yang,Kuangchao Chen,Chihyuan Lu

Solid-state Electronics, (2013)

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Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory

Chun Ling Chiang,C M Cheng,Jeng Hwa Liao,H J Lin,Chih Chieh Yeh,J Y Hsieh,L W Yang,T H Yang,K C Chen,C Y Lu

Solid State Phenomena, (2012)

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Wafer with improved intrinsic gettering ability

Chunling Chiang,Jungyu Hsieh,Lingwu Yang

(2012)

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Surface Charging Induced Gate Oxide Degradation

Chun Ling Chiang,C M Cheng,J Y Hsieh,Jeng Hwa Liao,L W Yang,T H Yang,K C Chen,C Y Lu

Solid State Phenomena, (2012)

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Method of improving intrinsic gettering ability of wafer

Chunling Chiang,Jungyu Hsieh,Lingwu Yang

(2011)

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Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory

Yenhao Shih, W U Minta, Shinchin Lee,Jungyu Hsieh,Erhkun Lai, K Y Hsieh

(2011)

Cited by4Bibtex

Method for fabricating a charge trapping memory device

Yenhao Shih, Chipin Lu,Jungyu Hsieh

(2011)

Bibtex

Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same

Erhkun Lai,Yenhao Shih,Tzuhsuan Hsu, Shihchih Lee,Jungyu Hsieh,Kuangyeu Hsieh

(2011)

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INTEGRATED CIRCUIT WITH IMPROVED INTRINSIC GETTERING ABILITY

Chunling Chiang,Jungyu Hsieh,Lingwu Yang

(2011)

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A study of barrier engineered Al 2 O 3 and HfO 2 high-K charge trapping devices (BE-MAONOS and BE-MHONOS) with optimal high-K thickness

S Lai,Chihping Chen,Peiying Du,Hangting Lue,Dawei Heh, Chihyen Shen,F K Hsueh, H Y Wu,Jenghwa Liao,Jungyu Hsieh,M T Wu, F H Hsu

(2010)

Cited by3Bibtex

Performance and reliability optimizations of BE-SONOS NAND Flash using SiON bandgap-tuning tunneling barrier

Jenghwa Liao,Jungyu Hsieh,Hangting Lue,Lingwu Yang,Tahone Yang,Kuangchao Chen,C Y Lu

Reliability Physics Symposium, pp.639-643, (2010)

Cited by2EIWOSBibtex

Robust shallow trench isolation technique used for 75nm nor flash memory

Jenghwa Liao,Kuoliang Wei,Hongji Lee,Chunmin Cheng,Chunling Chiang,Jungyu Hsieh,Lingwu Yang,Tahone Yang,Kuangchao Chen,Chihyuan Lu

Advanced Semiconductor Manufacturing Conference, pp.260-263, (2010)

EIWOSBibtex

ONO formation of semiconductor memory device and method of fabricating the same

Yenhao Shih, Shihchin Lee,Jungyu Hsieh,Erhkun Lai,Kuangyeu Hsieh

(2010)

Cited by1Bibtex

NON-VOLATILE MEMORY AND METHOD OF FABRICATING THE SAME

Chipin Lu,Jungyu Hsieh, Hsingju Lin

(2010)

Bibtex

A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

Hangting Lue,Tzuhsuan Hsu,Yihsuan Hsiao,S P Hong,M T Wu,F H Hsu, N Z Lien,Szuyu Wang,Jungyu Hsieh,Lingwu Yang,Tahone Yang,Kuangchao Chen

VLSI Technology, pp.131-132E, (2010)

Cited by105EIWOSBibtex

Methods of forming charge-trapping dielectric layers for semiconductor memory devices

Yenhao Shih, Shihchin Lee,Jungyu Hsieh,Erhkun Lai, K Y Hsieh

(2010)

Cited by2Bibtex

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Jung-Yu HsiehBinding

Papers44 papers

Jung-Yu Hsieh