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个人简介
Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.
研究兴趣
论文共 766 篇作者统计合作学者相似作者
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IEEE ELECTRON DEVICE LETTERSno. 8 (2024): 1528-1531
Krishna Saraswat -, Ashutosh Sharma -
International Journal For Multidisciplinary Researchno. 2 (2024)
Eros Reato, P. Palacios, J. A. Yang, S. Wahid,Marc Jaikissoon, J.-S. Ko, Alwin Daus, M. Saeed,Krishna C. Saraswat, Renato Negra,Eric Pop,Max Christian Lemme
Device Research Conferencepp.1-2, (2024)
ACS nanono. 36 (2024): 24819-24828
IEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023pp.1-4, (2023)
NATURE COMMUNICATIONSno. 1 (2023)
2023 Device Research Conference (DRC)pp.1-2, (2023)
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作者统计
#Papers: 763
#Citation: 33112
H-Index: 92
G-Index: 155
Sociability: 7
Diversity: 3
Activity: 47
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