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Since 1987, he has been with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign (UIUC), where he is presently a Professor. From 2000 to 2004, he was the Director of the Bio-Optoelectronic Sensor Systems (BOSS) Center. The BOSS Center was a consortium of seven universities and sponsored by DARPA. In 2004, he became the Director of the Hyper-Uniform Nanophotonic Technologies (HUNT) for Ultra-Fast Optoelectronic Systems Center. The HUNT Center is a consortium of the University of Illinois, Columbia University, Georgia Tech and Harvard University, and sponsored by DARPA under the University Photonics Research Centers program. The focus of the HUNT Center was to accomplish ultra-high (> 40 GHz) optoelectronic interconnect systems using a revolutionary ultra-fast transistor laser design, incorporated with quantum wells and quantum dots in the base region, which could be directly modulated at a speed beyond THz. During the 2003 academic year, he was a Ministry of Education Distinguished Visiting Chair Professor at the Institute of Optoelectronic Technology, National Tsinghua University, Taiwan. At UIUC, he made further contributions to the compound semiconductors including the first demonstration of dilute nitride III-V-N (GaP1-xNx) compound semiconductors, the invention of quantum wire heterostructure lasers using discovered strain-induced lateral layer ordering (SILO) process, and the demonstration of the world fastest double heterojunction bipolar transistor (DHBT) (fT ≥650GHz) using GaAsSb/InP type-II heterostructures. His pioneering work of the first observation of the dramatic bandgap energy bowing in dilute III-V-N compound semiconductors has led a great deal of follow-up research on similar material systems including the arsenic-rich Ga(In)AsN compounds currently being pursed at many major research groups. His current research interests are in the areas of in situ fabrication of low-dimensional optoelectronic materials and devices, novel high-speed optoelectronic devices, and the development of mid-IR optoelectronic devices. He has published more than 200 technical papers on compound semiconductor materials and devices.
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III–V Compound Semiconductors and DevicesGraduate Texts in Physicspp.57-103, (2020)
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