基本信息
浏览量:427
职业迁徙
个人简介
Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.
研究兴趣
论文共 835 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Kathryn M. Neilson,Sarallah Hamtaei,Koosha Nassiri Nazif, Joshua M. Carr, Sepideh Rahimisheikh, Frederick U. Nitta,Guy Brammertz, Jeffrey L. Blackburn,Joke Hadermann,Krishna C. Saraswat,Obadiah G. Reid,Bart Vermang,
arxiv(2024)
引用0浏览0引用
0
0
IEEE 53RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, ESSDERC 2023pp.1-4, (2023)
引用0浏览0引用
0
0
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)pp.1-4, (2023)
引用0浏览0EIWOS引用
0
0
2023 Device Research Conference (DRC)pp.1-2, (2023)
引用0浏览0EIWOS引用
0
0
2023 Middle East and North Africa Solar Conference (MENA-SC)pp.1-3, (2023)
引用0浏览0EIWOS引用
0
0
IEEE Transactions on Electron Devicesno. 11 (2023): 5685-5689
2023 IEEE International Flexible Electronics Technology Conference (IFETC)pp.01-03, (2023)
引用0浏览0EIWOS引用
0
0
加载更多
作者统计
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn