Wei-Liang Lin, Wen-Jer Tsai, C.C. Cheng, Chun-Chang Lu, S.H. Ku, Y.W. Chang, Guan-Wei Wu, Lenvis Liu, S.W. Hwang,Tao-Cheng Lu,Kuang-Chao Chen,Tseung-Yuen Tseng

symposium on vlsi technology, (2019)

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Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching

Yao-An Chung, Cheng-Yi Lung, Yuan-Chieh Chiu, Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

advanced semiconductor manufacturing conference, (2019)

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Pre-Epitaxial Plasma Etch Treatment for the Selective Epitaxial Growth of Silicon in High Aspect Ratio 3D NAND Memory

Cheng-Yi Lung, Yao-An Chung, Ming-Tsung Wu, Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

advanced semiconductor manufacturing conference, (2019)

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Screening for 22q11.2 deletion syndrome by two non-invasive prenatal testing methodologies: A case with discordant results

Liang-Ming Lo,Chii-Shinn Shiau,Kuang-Chao Chen,S W S Shaw,Peter Benn

Taiwanese journal of obstetrics & gynecology, no. 1 (2019): 40-42

WOSBibtex

Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String

Wei-Liang Lin,Wen-Jer Tsai, C. C. Cheng,S. H. Ku,Lenvis Liu, S. W. Hwang,Tao-Cheng Lu,Kuang-Chao Chen,Tseung-Yuen Tseng,Chih-Yuan Lu

IEEE Transactions on Electron Devices, no. 4 (2019): 1734-1740

EIWOSBibtex

Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory

Jeng-Hwa Liao, Zong-Jie Ko, Yu-Min Lin,Hsing-Ju Lin,Jung-Yu Hsieh,Ling-Wu Yang,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

Solid-state Electronics, (2018): 39-43

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Asymmetric etching profile control during high aspect ratio Plasma etch

Zusing Yang, Li-Ian Wu,Sheng-Yuan Chang,Yuan-Chieh Chiu,Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu, Hayato Watanabe, Yinhwa Cheng, Takao Arase

2018 29TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp.211.0-215.0, (2018)

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STI scratch defects reduction by using solid pad in 1X technology node

K. C. Chen, Yen-Ting Chen, Chun-Fu Chen,Tuung Luoh, Lin-Wuu Yang,Tahone Yang,Kuang-Chao Chen, Yuchi Tay, Yi Ming Chen, Johnson Ton, Yen Pin Lu

china semiconductor technology international conference, (2018)

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Study of Ti/TiN bump defect formation mechanism and elimination by etch process optimization

Li-Lan Wu,Yuan-Chieh Chiu, Zusing Yang,Sheng-Yuan Chang,Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

2018 29TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), pp.66.0-69.0, (2018)

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A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability

Hang-Ting Lue,Pei-Ying Du,Wei-Chen Chen, Yung-Chun Lee,Tzu-Hsuan Hsu,Teng-Hao Yeh,Kuo-Pin Chang,Chih-Chang Hsieh, Chiatze Huang, Guan-Ru Lee,Chih-Ping Chen,Chieh-Fang Chen

international electron devices meeting, (2017)

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Tungsten corrosion and recess improvement by feasible slurry and clean chemical in WCMP process

K. C. Chen, Chun-Fu Chen, Yung-Tai Hung,Tuung Luoh,Ling-Wuu Yang,Tahone Yang,Kuang-Chao Chen

international interconnect technology conference, pp.1-3, (2017)

Cited by1Bibtex

Reduction of wafer arcing during high aspect ratio etching

Zusing Yang, Min-Feng Hung,Kuo-Pin Chang, Chih-Yao Lin,Sheng-Yuan Chang,Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

international convention on information and communication technology electronics and microelectronic..., pp.421-425, (2017)

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Investigations on elimination of plasma-induced Si substrate damage for 3D NAND fabrication

Chih-Yao Lin, Chieh Lo,Wei-Chen Chen, Zusing Yang,Sheng-Yuan Chang,Hong-Ji Lee,Nan-Tzu Lian,Tahone Yang,Kuang-Chao Chen,Chih-Yuan Lu

international convention on information and communication technology electronics and microelectronic..., pp.431-434, (2017)

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Kuang-Chao Chen