Prof. Mukherjee is interested in synthesizing compound semiconductors for improved optoelectronic, imaging, and power generation devices. This involves developing a detailed understanding of thin film growth phenomena in semiconductor alloys, aspects of lattice engineering, role of crystalline defects and reliability, as well as a variety of microstructural characterization techniques. Studying the challenges associated with the integration compound semiconductors on to heterogeneous substrates like silicon is a central theme of his work. He plans to establish expertise in narrow bandgap semiconductor growth in the III-V and the lesser studied IV-VI material systems. These semiconductors will have application in detecting and emitting in the infrared as well as test beds for novel physical phenomena. Students in his group will gain an in-depth understanding of epitaxy, electron microscopy, optical spectroscopy, and device physics – tools needed to unlock the potential of a new semiconductor. He envisions a day when a designer can identify a material with new properties and drop it on to an integrated circuit with little compromise, thus marrying cheap computing with all-encompassing interaction with the environment.