Ling-Wuu Yang

Technology Development Center, Macronix International Co. Ltd. No. 16, Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, ROC

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Papers35 papers

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Tungsten corrosion and recess improvement by feasible slurry and clean chemical in WCMP process

K. C. Chen, Chun-Fu Chen, Yung-Tai Hung,Tuung Luoh,Ling-Wuu Yang,Tahone Yang,Kuang-Chao Chen

international interconnect technology conference, pp.1-3, (2017)

Cited by1Bibtex

TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

Tuung Luoh,Yukai Huang,Yungtai Hung,Lingwuu Yang,Tahone Yang,Kuangchao Chen

(2016)

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Capacitance density and breakdown voltage improvement by optimizing the PECVD dielectric film characteristics in metal insulator metal capacitors-Chin-Tsan Yeh

Szuming Chu, Tunn Louh,Lingwuu Yang,Tahone Yang,Kuangchao Chen

(2015)

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METHOD FOR MEASURING AND ANALYZING SURFACE STRUCTURE OF CHIP OR WAFER

Tuung Luoh,Hsiangchou Liao,Lingwuu Yang,Tahone Yang,Kuangchao Chen

(2015)

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Slurry selectivity to local thickness variations control in advanced Cu CMP process

Tunghe Chou, Syueren Wu, Chunfu Chen,Yungtai Hung,Tuung Luoh,Lingwuu Yang,Tahone Yang,Kuangchao Chen

(2015)

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METHODS FOR FABRICATING SEMICONDUCTOR DEVICE

Jenghwa Liao, Jungyu Shieh,Lingwuu Yang

(2015)

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Multi-layer polysilicon suppression of implant species penetration

Chun Ling Chiang, Wenming Chang, Chunming Cheng,Lingwuu Yang,Kuangchao Chen

(2014)

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NONVOLATILE MEMORY DEVICE AND METHOD FOR MAKING THE SAME

Chipin Lu,Jungyu Hsieh,Lingwuu Yang

(2013)

Cited by1Bibtex

In-line inspection yield prediction system

Hsiangchou Liao,Chelun Hung,Tuung Luoh,Lingwuu Yang,Tahone Yang,Kuangchao Chen

(2013)

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CHARGE TRAPPING MEMORY CELL HAVING BANDGAP ENGINEERED TUNNELING STRUCTURE WITH OXYNITRIDE ISOLATION LAYER

Jenghwa Liao, Jungyu Shieh,Lingwuu Yang

(2011)

Cited by5Bibtex

Cleaning method for use in semiconductor device fabrication

Chiawei Wu,Tuung Luoh,Lingwuu Yang,Kuangchao Chen

(2009)

Cited by1Bibtex

Method for symmetric deposition of metal layer

Shenghui Hsieh,Lingwuu Yang,Chitung Huang,Kuangchao Chen

(2009)

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A novel junction-free BE-SONOS NAND flash

Hangting Lue,Erhkun Lai,Y H Hsiao,S P Hong,M T Wu,F H Hsu, N Z Lien, S Y Wang,L W Yang,Tahone Yang, K C Chen,K Y Hsieh

Honolulu, HI, pp.140-141E, (2008)

Cited by18EIWOSBibtex

Scaling evaluation of BE-SONOS NAND flash beyond 20 nm

Hangting Lue,Tzuhsuan Hsu,S C Lai,Y H Hsiao, W C Peng, C W Liao, Y F Huang,S P Hong,M T Wu,F H Hsu, N Z Lien, S Y Wang

Honolulu, HI, pp.116-117E, (2008)

Cited by23EIWOSBibtex

Fabrication method of electronic device

Tuung Luoh,Lingwuu Yang,Kuangchao Chen

(2008)

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Etching method for semiconductor element

Tuung Luoh,Lingwuu Yang,Kuangchao Chen

(2008)

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Methods for forming a trench isolation structure with rounded corners in a silicon substrate

Chiawei Wu, Jungyu Shieh,Lingwuu Yang

(2008)

Cited by2Bibtex

METHODS FOR FORMING AN ISOLATION STRUCTURE IN A SILICON SUBSTRATE

Chiawei Wu, Jungyu Shieh,Lingwuu Yang

(2007)

Cited by5Bibtex

Method for forming self-aligned contacts and local interconnects simultaneously

Tuung Luoh,Lingwuu Yang,Kuangchao Chen

(2007)

Cited by5Bibtex

Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layer

Chipin Lu,Lingwuu Yang,Kuangchao Chen

(2007)

Cited by7Bibtex

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Ling-Wuu YangBinding

Papers35 papers

Ling-Wuu Yang