基本信息
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职业迁徙
个人简介
Research interest
Novel epitaxy and studies of interfacial structures – materials science in its nano-meter scale
Growth of high-quality semiconductors, metals, oxides using multiple-chamber UHV system (including molecular beam epitaxy) for studies in materials science, physics, and devices
Studies, growth, and device processing of novel heterostructures in metal/semiconductor, oxide/semiconductor, semiconductor/semiconductor, oxide/oxide, oxide/nitride, and metal/oxide/semiconductor with excellent interfacial properties
Next generation high speed and high power electronic devices
Quantum well and quantum dot materials and their device applications
All vacuum in-situ processing - electron cyclotron resonance (ECR) plasma etching and molecular beam epitaxial regrowth - for research in new electronic materials, novel growth techniques, high performance electronic/opto-electronic devices, and innovative processing.
研究兴趣
论文共 679 篇作者统计合作学者相似作者
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J. -F. Wong, K. -H. M. Chen, J. -M. Chia, Z. -P. Huang, S. -X. Wang, P. -T. Chen, L. B. Young,Y. -H. G. Lin, S. -F Lee, C. -Y Mou,M. Hong, J. Kwo
PHYSICAL REVIEW Bno. 2 (2024)
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)pp.1-2, (2023)
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ACS APPLIED ELECTRONIC MATERIALSno. 7 (2023): 3809-3816
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT (2023)
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arxiv(2023)
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)pp.1-2, (2023)
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JOURNAL OF APPLIED PHYSICSno. 9 (2023)
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H. W. Wan, Y. T. Cheng, L. B. Young,C. K. Cheng,W. S. Chen,Y. H. G. Lin,C. H. Hsu, T. W. Pi,Y. H. Lin,J. Kwo,M. Hong
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)pp.1-2, (2023)
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2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT (2023)
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