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Marco Malinverni

Ecole Polytechnique Fédérale de Lausanne (EPFL), IPEQ, CH-1015 Lausanne, Switzerland

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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Hironori Okumura,Hironori Okumura,D. Martin,Marco Malinverni,N. Grandjean

Applied Physics Letters, no. 7 (2016): 072102

Bibtex

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Akira Uedono,Marco Malinverni,D. Martin,Hironori Okumura,Shoji Ishibashi,N. Grandjean

Journal of Applied Physics, no. 24 (2016): 245702

Bibtex

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

Marco Malinverni, Camille Tardy,Marco Rossetti,A. Castiglia,Marcus Duelk,Christian Velez,D. Martin,N. Grandjean

APPLIED PHYSICS EXPRESS, no. 6 (2016): 061004

Bibtex

$W$ -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Diego Marti,Lorenzo Lugani,Jean-François Carlin,Marco Malinverni,N. Grandjean,C.R. Bolognesi

IEEE Electron Device Letters, no. 8 (2016): 1025-1028

EIWOSBibtex

High p-type GaN for advanced optoelectronic devices

H. Okumura,Marco Malinverni,D. Martin,N. Grandjean

ieee photonics conference, pp.661-662, (2016)

Bibtex

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Diego Marti,Stefano Tirelli,Valeria Teppati,Lorenzo Lugani,J F Carlin,M Malinverni,N Grandjean,C R Bolognesi

Electron Device Letters, IEEE , no. 1 (2015): 17-19

Cited by19EIWOSBibtex

\ InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

M Malinverni,D Martin,N Grandjean

Applied Physics Letters, (2015)

Cited by25Bibtex

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

M Malinverni,J M Lamy, Denis Martin,Lise Lahourcade,E Feltin,J Dorsaz,Antonino Castiglia,Marco Rossetti,Marcus Duelk,Christian Velez,N Grandjean

APPLIED PHYSICS EXPRESS, no. 2 (2015)

Cited by4Bibtex

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Lorenzo Lugani,M Malinverni,Stefano Tirelli,Diego Marti,Etienne Giraud,J F Carlin,C R Bolognesi,N Grandjean

Applied Physics Letters, (2014)

Cited by9Bibtex

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

M Malinverni,J M Lamy,D Martin,E Feltin,J Dorsaz,Antonino Castiglia,M Rossetti,Marcus Duelk,Christian Velez,N Grandjean

Applied Physics Letters, (2014)

Cited by11Bibtex

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Amélie Dussaigne,Marcus Gonschorek,Marco Malinverni,Marcel A. Py,Denis Martin,Anas Mouti,Pierre Stadelmann,Nicolas Grandjean

JAPANESE JOURNAL OF APPLIED PHYSICS, no. 6.0 (2010)

Cited by10Bibtex

High-mobility AlGaN/GaN two-dimensional electron gas grown on (111) single crystal diamond substrate

Amelie Dussaigne,M Malinverni,M Gonschorek,M A Py,Denis Martin,N Grandjean,Anas Mouti,P A Stadelmann

Applied Physics Letters, (2009)

Bibtex

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

A. Dussaigne,M. Malinverni,D. Martin,A. Castiglia,N. Grandjean

Journal of Crystal Growth, no. 21 (2009): 4539-4542

Cited by14EIBibtex

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