Home Research-feed Channel Rankings GCT THU AI TR Open Data Must Reading

views: 2

Min Sun

Sign in to view more

Show Academic Trajectory

Ego Network

D-Core

Research Interests

Author Statistics

Experience

Education

Bio

None

Papers1 papers

Sort

By YearBy Citation

High threshold voltage in GaN MOS-HEMTs modulated by fluorine plasma and gate oxide

Yuhao Zhang,Min Sun,Joglekar, S.J.,Palacios, T.

Device Research Conference, pp.141-142, (2013)

Cited by4EIWOSBibtex

View All

Base Info Papers Patents Projects