Oleg Laboutin

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Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors

A. Y. Polyakov,N. B. Smirnov, I. V. Shchemerov, Jiancheng Yang,F. Ren,Chien-Fong Lo,Oleg Laboutin,J. W. Johnson,S. J. Pearton

ECS Journal of Solid State Science and Technology, no. 2 (2018)

Cited by2Bibtex

Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

Chien-Fong Lo, Chen-Kai Kao,Oleg Laboutin, Hugues Marchand, Rodney Pelzel,Wayne Johnson

ECS Journal of Solid State Science and Technology, no. 11 (2017)

Bibtex

GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

Kevin T. Chern,Noah P. Allen,Timothy Ciarkowski,Oleg Laboutin,Roger E. Welser,Louis J. Guido

Materials Science in Semiconductor Processing, (2016): 2-6

Bibtex

(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

C F Lo,Oleg Laboutin, C K Kao, Kelly Oconnor, D N Hill,Wayne Johnson

(2015)

Bibtex

MOCVD of GaN-based HEMT structures on 8 inch silicon substrates

Oleg Laboutin,Chienfong Lo, Chenkai Kao, Kevin O Connor,Wayne Johnson, Daily Hill

(2015)

Bibtex

HEMT Structure with Iron-Doping-Stop Component and Methods of Forming

Oleg Laboutin,Yu Cao,Wayne Johnson

(2015)

Cited by3Bibtex

(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come

G Gebara, T D Kennedy, Bradley D Schultz,Wayne Johnson, T E Kazior, J Comeau, J R Laroche,Oleg Laboutin, Kelly Ip, Michael S Breen, C Fong,W E Hoke

(2014)

Cited by1Bibtex

COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR

Oleg Laboutin,Yu Cao,Wayne Johnson

(2014)

Cited by4Bibtex

GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

Kevin T Chern,L J Guido,Timothy A Ciarkowski,Noah P Allen,Oleg Laboutin,Roger E Welser,V C Elarde

Photovoltaic Specialist Conference, pp.1139-1142, (2014)

EIWOSBibtex

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Akira Uedono,Tatsuya Fujishima,Daniel Piedra, Nakaaki Yoshihara,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,W F Johnson,Tomas Palacios

Applied Physics Letters, (2014)

Cited by3Bibtex

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Akira Uedono,Tatsuya Fujishima,Yu Cao,Yang Zhang, Nakaaki Yoshihara,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,Wayne Johnson,Tomas Apostol Palacios

Applied Physics Letters, (2014)

Cited by12Bibtex

Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam

Akira Uedono, Nakaaki Yoshihara,Yuhao Zhang,Min Sun,Daniel Piedra,Tatsuya Fujishima,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,Wayne Johnson,Tomas Palacios

Applied Physics Express, (2014)

Cited by3Bibtex

Vacancy clusters introduced by CF

Akira Uedono, Nakaaki Yoshihara,Yuhao Zhang,Min Sun,Daniel Piedra,Tatsuya Fujishima,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,Wayne Johnson,Tomas Palacios

Applied Physics Express, (2014)

Bibtex

(Invited) Development of 4 Inch and 6 Inch GaN-on-Si for High-Voltage Operation

Kelly Oconnor, D T Hill, C F Lo,Yu Cao, Walter R Johnson,Oleg Laboutin

(2014)

Bibtex

Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

Akira Uedono,Tatsuya Fujishima,Yu Cao,Sameer Joglekar,Daniel Piedra,Hyungseok Lee, Yang Zhang, Nakaaki Yoshihara,Shoji Ishibashi,Masatomo Sumiya,Oleg Laboutin,Wayne Johnson

Junction Technology, pp.1-5, (2014)

EIWOSBibtex

ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME

Yu Cao,Oleg Laboutin,Wayne Johnson

(2014)

Cited by2Bibtex

Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm Si Substrates

J R Laroche, Kelly Ip, Mark Breen,Yu Cao, John P Bettencourt, Doug Guenther,Oleg Laboutin, Tina Trimble,Wayne Johnson, T E Kazior

(2014)

Cited by1Bibtex

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Ronghua Wang,Guowang Li,Golnaz Karbasian,Jia Guo,Bo Song,Yuanzheng Yue,Zongyang Hu,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L Snider,Patrick Fay

IEEE Electron Device Letters, (2013)

Cited by34Bibtex

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz

Ronghua Wang,Guowang Li,Golnaz Karbasian,Jia Guo,Faiza Faria,Zongyang Hu,Yuanzheng Yue,Jai Verma,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L Snider

Applied Physics Express, (2013)

Cited by24Bibtex

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

D S Lee,Han Wang,Allen Hsu,Mohamed Azize,Oleg Laboutin,Yu Cao,J W Johnson,E A Beam, A A Ketterson,Michael Schuette,Paul Saunier,Tomas Palacios

IEEE Electron Device Letters, (2013)

Cited by45Bibtex

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Papers64 papers

Oleg Laboutin