P.W. Yu

University Research Center, Wright State University, Dayton, OH 45435, USA

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Below Band Gap Photoreflectance Transitions in Epitaxial GaN

P W Yu,J D Clark,David C Look,C Q Chen,Jinwei Yang, Edmundas Koutstis,M Asif Khan, Denis V Tsvertkov,V A Dmitriev

Applied Physics Letters, (2004)

Cited by3Bibtex

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Mee-Yi Ryu,E Kuokstis,C.Q Chen,J.W Yang,G Simin,M Asif Khan,G.G Sim,P.W Yu

Solid State Communications, no. 6 (2003): 329-332

Cited by7EIBibtex

Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD

Jae Ho Song,Jhang W. Lee,P.W. Yu,Mee-Yi Ryu, J. Zhang,E. Kuokstis,J.W. Yang,M. Asif Khan

Solid State Communications, no. 9 (2003): 661-665

Cited by6EIBibtex

Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

Hyung Koun Cho,Jeong Yong Lee, Narayan P Sharma,C J Humphreys,G M Yang,Chul Soo Kim, J H Song,P W Yu

Applied Physics Letters, (2002)

Cited by3Bibtex

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

Jin Wei Yang,E Kuokstis,W H Sun,Mikhail Gaevski,C Q Chen,P W Yu,M Y Ryu,J H Song,B H Chai,J J Gallagher,Mitch M C Chou,D W Hill

(2002)

Bibtex

Height-controlled InAs quantum dots by using a thin InGaAs layer

P W Yu,Joo In Lee, J S Kim,Song Gang Kim,Jaeyoung Leem,Minhyon Jeon

Applied Physics Letters, (2002)

Cited by24Bibtex

Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

Hyung Koun Cho,J Y Lee,J H Song,P W Yu,Gye Mo Yang,Chong Soo Kim

Journal of Applied Physics, (2002)

Cited by32Bibtex

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

Meeyi Ryu,C Q Chen,E Kuokstis,J W Yang,G Simin,M Asif Khan, G G Sim,P W Yu

(2002)

Bibtex

Effects of high potential barrier on InAs quantum dots and wetting layer

Jin Soo Kim,P W Yu,Jaeyoung Leem,Minhyon Jeon,Sam Kyu Noh,Joo In Lee,Gu Hyun Kim,Sekyung Kang,Song Gang Kim

Journal of Applied Physics, (2002)

Cited by42Bibtex

Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells

Meeyi Ryu,C Q Chen,E Kuokstis,J W Yang,G Simin,M Asif Khan, G G Sim,P W Yu

Applied Physics Letters, (2002)

Cited by13Bibtex

Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

Jong Sung Kim,P W Yu, J Y Leem, Ji In Lee,Seok Kyun Noh,Seung Min Kim,Jae Sung Son, U H Lee, J S Yim,D Lee

Applied Physics Letters, (2001)

Cited by36Bibtex

Layer Thickness Dependence of Strain in GaN grown by HVPE

G G Sim,P W Yu,D C Reynolds,David C Look,Sang Soo Kim,D Y Noh

(2001)

Bibtex

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Hyung Koun Cho,Jeong Yong Lee, Narayan P Sharma,C J Humphreys,Gye Mo Yang,C S Kim,Jong Hun Song,P W Yu

Applied Physics Letters, (2001)

Cited by88Bibtex

Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Meeyi Ryu,P W Yu,Eunjoo Shin,Joo In Lee,Sung Kyu Yu,Eunsoon Oh,O H Nam, Chul Soo Sone,Yong Jo Park

Journal of Applied Physics, (2001)

Cited by18Bibtex

Precise control of emission wavelength from InAs quantum dots adopting a thin AlAs layer

Jin-Soo Kim,P. W. Yu,S. K. Noh,J.I. Lee,Jong Su Kim, S. M. Kin,Se-Kyung Kang,Jae-Young Leem,Minhyon Jeon

Journal of the Korean Physical Society, (2001)

Bibtex

Cathodoluminescence study of In[sub x]Ga[sub 1−x]N quantum wells

Eunsoon Oh,Myoung Hee Lee,Youngjin Park,Hyunchul Park,P W Yu,Seok Won Park,J H Song,M Y Ryu,Kwang Joo Kim

Journal of Applied Physics, (2001)

Bibtex

Photoreflectance study on InAs quantum well and quantum dots with quasi-monolayers

Jin-Soo Kim,P. W. Yu, Sam Kyu Nor,Joo In Lee,Jong Su Kim, Sung Man Kim, Gu Hyun Kim,Se-Kyung Kang,Song Gang Kim,Jeong-Sik Son,Jae-Young Leem

Journal of the Korean Physical Society, (2001)

Bibtex

Cathodoluminescence study of InxGa1−xN quantum wells

Eunsoon Oh,Myoung Hee Lee,Kwang Joo Kim,M Y Ryu, Ju Ho Song,Sung Won Park,P W Yu, Heechan Park,Y Park

Journal of Applied Physics, (2001)

Cited by2Bibtex

Effects of Si-doping in the barriers on the recombination dynamics in In[sub 0.15]Ga[sub 0.85]N/In[sub 0.015]Ga[sub 0.985]N quantum wells

Sung Kyu Yu, Chul Soo Sone,Yong Jo Park,Meeyi Ryu,P W Yu,Eunjoo Shin,Eunsoon Oh,O H Nam,Joo In Lee

Journal of Applied Physics, (2001)

Bibtex

Silicon doping effect on the optical properties of In 0.15 Ga 0.85 N/In 0.015 Ga 0.985 N quantum wells

M Y Ryu, Y J Yu,Eun Ju Shin,P W Yu,Jung Il Lee, S K Yu, Eun Sil Oh,O H Nam, C Sone,Y J Park,Tae Ik Kim

Solid State Communications, (2000)

Cited by19Bibtex

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Papers99 papers

P.W. Yu