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Peide(Peter) Ye

Professor

School of Electrical and Computer Engineering, Purdue University

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Background & Interests:

Semiconductor physics and devices, Nano-structures and nano-fabrications, Quantum/spin-transport, Atomic layer deposition, High-k/III-V and Ge device integration, High-performance III-V and Ge MOSFETs, High-k/2D integration, High-performance 2D devices, 2D spintronics, All oxide electronics, and wide bandgap semiconductor GaN and Ga2O3 power electronics.

Papers380 papers

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Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineering

Wonil Chung, Dongqi Zheng, Wei-E Wang, Mark Rodder,Peide D. Ye

2020 IEEE Silicon Nanoelectronics Workshop (SNW), pp.15-16, (2020)

EIWOSBibtex

Why In 2 O 3 Can Make 0.7 nm Atomic Layer Thin Transistors

Mengwei Si, Yaoqiao Hu, Zehao Lin,Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu,Haiyan Wang,Kyeongjae Cho,Peide D Ye

Nano letters, (2020)

WOSBibtex

Single Pulse Charge Pumping Measurements on GaN MOS-HEMTs: Fast and Reliable Extraction of Interface Traps Density

Sami Alghamdi,Mengwei Si,Hagyoul Bae, Hong Zhou,Peide D. Ye

IEEE Transactions on Electron Devices, no. 2 (2020): 444-448

EIWOSBibtex

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Mengwei Si, Joseph Andler, Xiao Lyu, Chang Niu, Suman Datta, Rakesh Agrawal,Peide D. Ye

ACS nano, no. 9 (2020): 11542-11547

WOSBibtex

Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors

Jing-Kai Qin, Feichi Zhou, Jingli Wang, Jiewei Chen, Cong Wang, Xuyun Guo, Shouxin Zhao, Yi Pei, Liang Zhen,Peide D Ye,Shu Ping Lau,Ye Zhu

ACS nano, no. 8 (2020): 10018-10026

WOSBibtex

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

Giriraj Jnawali, Yuan Xiang, Samuel M Linser, Iraj Abbasian Shojaei, Ruoxing Wang, Gang Qiu, Chao Lian,Bryan M Wong,Wenzhuo Wu,Peide D Ye,Yongsheng Leng,Howard E Jackson

Nature communications, no. 1 (2020): 3991

WOSBibtex

A tunable ferroelectric based unreleased RF resonator

Yanbo He,Bichoy Bahr,Mengwei Si,Peide Ye,Dana Weinstein

MICROSYSTEMS & NANOENGINEERING, no. 1.0 (2020): 1-7

Bibtex

{\alpha}-In2Se3 based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories

Atanu K. Saha,Mengwei Si,Peide Ye,Sumeet K. Gupta

Bibtex

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

Xiao Lyu,Mengwei Si,Pragya R. Shrestha,Jason P. Campbell,Kin P. Cheung,Peide D. Ye

2020 IEEE Silicon Nanoelectronics Workshop (SNW), pp.7-8, (2020)

EIWOSBibtex

Crystallography and Properties of Atomic Chirality in Two-dimensional Helical Crystal Tellurium

Chang Niu, Gang Qiu, Yixiu Wang,Jingkai Qin, Jie Jian,Haiyan Wang,Wenzhuo Wu,Peide Ye

Bulletin of the American Physical Society, (2020)

Bibtex

Quantum Hall Effect in Chirality-induced Weyl Semiconductor n -type Tellurene

Gang Qiu, Chang Niu, Yixiu Wang,Mengwei Si,Wenzhuo Wu,Peide Ye

Bulletin of the American Physical Society, (2020)

Bibtex

Weak-antilocalization Induced by Spin-orbit Interaction in Two-dimensional Tellurium

Chang Niu, Zhuocheng Zhang, Gang Qiu, Yixiu Wang,Wenzhuo Wu,Peide Ye

Bulletin of the American Physical Society, (2020)

Bibtex

Electrical Transport of One-Dimensional Atomic Tellurium Nanowires Scaling Down to Two Nanometer Limit

Pai-Ying Liao,Jingkai Qin, Gang Qiu,Mengwei Si, Siqi Zhang,Yoke Yap,Peide Ye

Bulletin of the American Physical Society, (2020)

Bibtex

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

Gang Qiu, Chang Niu, Yixiu Wang,Mengwei Si, Zhuocheng Zhang,Wenzhuo Wu,Peide D Ye

Nature nanotechnology, pp.1-7, (2020)

WOSBibtex

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors

Samuel Berweger, Gang Qiu, Yixiu Wang, Benjamin Pollard, Kristen L Genter, Robert Tyrrell-Ead, T Mitch Wallis,Wenzhuo Wu,Peide D Ye,Pavel Kabos

Nano letters, no. 2 (2019): 1289-1294

WOSBibtex

Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Jingkai Qin, Hang Yan, Gang Qiu,Mengwei Si,Peng Miao, Yuqin Duan,Wenzhu Shao, Liang Zhen,Chengyan Xu,Peide D Ye

Nano Research, no. 3 (2019): 669-674

Cited by1Bibtex

A Ferroelectric Semiconductor Field-Effect Transistor

Mengwei Si, Gang Qiu,Peide Ye

Bulletin of the American Physical Society, (2019)

Bibtex

Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance nanoelectronics

Yixiu Wang, Raquel de Souza Borges Ferreira, Ruoxing Wang, Gang Qiu, Gaoda Li, Gaoda Li,Yong Qin, Yong Qin,Peide D. Ye,Arman Sabbaghi,Wenzhuo Wu

Nano Energy, (2019): 480-491

Cited by1Bibtex

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts

Gang Qiu, Shouyuan Huang, Mauricio Segovia, Prabhu K Venuthurumilli, Yixiu Wang,Wenzhuo Wu,Xianfan Xu,Peide D Ye

Nano letters, no. 3 (2019): 1955-1962

WOSBibtex

A critical review of recent progress on negative capacitance field-effect transistors

Muhammad A. Alam,Mengwei Si,Peide D. Ye

Applied Physics Letters, no. 9 (2019): 090401

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